Transistor
2SA0719, 2SA0720 (2SA719, 2SA720)
Silicon PNP epitaxial planar type
Unit: mm
For low-frequency power amplification and driver amplification
5.0±0.2
4.0±0.2
Complementary to 2SC1317 and 2SC1318
■ Features
• Complementary pair with 2SC1317 and 2SC1318.
0.7±0.1
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
−30
Unit
+0.15
–0.1
+0.15
0.45
0.45
–0.1
2SA0719
2SA0720
2SA0719
2SA0720
VCBO
V
Collector to
+0.6
–0.2
+0.6
2.5
–0.2
2.5
base voltage
−60
VCEO
−25
V
1: Emitter
Collector to
1
2 3
2: Collector
3: Base
emitter voltage
−50
EIAJ: SC-43A
TO-92-B1 Package
Emitter to base voltage
Peak collector current
Collector current
VEBO
ICP
IC
−5
V
A
−1
−500
625
mA
mW
°C
Collector power dissipation
Junction temperature
Storage temperature
PC
Tj
150
Tstg
−55 to +150
°C
■ Electrical Characteristics Ta = 25°C
Parameter
Symbol
ICBO
Conditions
CB = −20 V, IE = 0
Min
Typ
Max
Unit
µA
V
Collector cutoff current
V
− 0.1
2SA0719
2SA0720
2SA0719
2SA0720
VCBO
I
C = −10 µA, IE = 0
−30
−60
−25
−50
−5
Collector to base
voltage
VCEO
I
C = −10 mA, IB = 0
V
V
Collector to emitter
voltage
Emitter to base voltage
VEBO
IE = −10 µA, IC = 0
*
Forward current transfer ratio
hFE1
V
CE = −10 V, IC = −150 mA
CE = −10 V, IC = −500 mA
85
340
hFE2
VCE(sat)
VBE(sat)
fT
V
40
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
IC = −300 mA, IB = −30 mA
− 0.35 − 0.6
V
V
IC = −300 mA, IB = −30 mA
−1.1
200
6
−1.5
V
CB = −10 V, IE = 50 mA, f = 200 MHz
CB = −10 V, IE = 0, f = 1 MHz
MHz
pF
Collector output capacitance
Cob
V
15
Note) : hFE1 Rank classification
*
Rank
Q
R
S
hFE1
85 to 170
120 to 240
170 to 340
Note) The part numbers in the parenthesis show conventional part number.
Publication date: March 2002
SJC00002BED
1