Datasheet > 2N7002W_12

2N7002W_12

更新时间： 2022-09-16 15:59:14

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友顺 - UTC		/
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描述
300mA, 60V N-CHANNEL POWER MOSFET

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2N7002W_12 数据手册

2N7002W

Preliminary

Power MOSFET

ABSOLUTE MAXIMUM RATINGS (T_A=25°C, unless otherwise specified.)

PARAMETER

SYMBOL

V_DSS

RATINGS

UNIT

Drain-Source Voltage

Drain-Gate Voltage (R_GS≤1MΩ)

V_DGR

Continuous

±20

±40

300

Gate Source Voltage

V_GSS

I_D

Non Repetitive(t_P<50μs)

Continuous

Drain Current

Pulsed

800

Power Dissipation

200

mW/°C

°C

P_D

Derated Above 25°C

Junction Temperature

Storage Temperature

1.6

T_J

+ 150

-55 ~ +150

T_STG

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

°C/W

Junction to Ambient

θ_JA

625 (Note1)

ELECTRICAL CHARACTERISTICS (T_A=25°C, unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

Drain-Source Leakage Current

BV_DSSV_GS=0V, I_D=10μA

I_DSS

I_GSSF

I_GSSR

V_DS=60V, V_GS=0V

V_GS=20V, V_DS=0V

V_GS=-20V, V_DS=0V

μA

100

-100

Gate-Source Leakage Current

ON CHARACTERISTICS (Note2)

Gate Threshold Voltage

V_GS(TH)V_GS= V_DS, I_D=250μA

_GS= 10V, I_D=300mA

V_GS= 5.0V, I_D=50mA

_GS=10V, I_D=300mA ,T_J=125°C

2.1

0.6

2.5

3.75

1.5

Drain-Source On-Voltage

V_{DS (ON)}

0.09

13.5

7.5

Ω

Static Drain-Source On-Resistance

R_{DS (ON)}

V_GS=5.0V, I_D=50mA

DYNAMIC CHARACTERISTICS

Input Capacitance

C_ISS

C_OSS

C_RSS

V_DS=25V,V_GS=0V,f=1.0MHz

Output Capacitance

Reverse Transfer Capacitance

_DD=30V, R_L=150Ω, I_D=200mA,

_GS=10V, R_GEN=25Ω

Turn-On Time

Turn-Off Time

t_ON

_DD=30V, R_L=25Ω, I_D=200mA,

_GS=10V, R_GEN=25Ω

t_OFF

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

Drain-Source Diode Forward Voltage

Maximum Pulsed Drain-Source Diode

Forward Current

V_SD

V_GS=0V, Is=300mA (Note )

0.88

1.5

0.8

I_SM

Maximum Continuous Drain-Source

Diode Forward Current

300

Note: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch. Minimum land pad size.

2. Pulse Test: Pulse Width≤300μs, Duty Cycle≤2.0%

UNISONIC TECHNOLOGIES CO., LTD

2 of 3

QW-R502-537.b

www.unisonic.com.tw

123

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