Datasheet > 2N60LL-B-TM3-T

2N60LL-B-TM3-T

更新时间： 2022-04-23 23:00:11

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描述
2 Amps,􀀁600/650 Volts N-CHANNEL MOSFET

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2N60LL-B-TM3-T 数据手册

2N60L

Power MOSFET

ELECTRICAL CHARACTERISTICS(Cont.)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

SWITCHING CHARACTERISTICS

Turn-On Delay Time

t_{D (ON)}

t_R

t_D(OFF)

t_F

Turn-On Rise Time

V_DD=300V, I_D=2.4A, R_G=25Ω

(Note 4, 5)

Turn-Off Delay Time

Turn-Off Fall Time

Total Gate Charge

Q_G

9.0

1.6

4.3

V_DS=480V, V_GS=10V, I_D=2.4A

Gate-Source Charge

Q_GS

Q_GD

(Note 4, 5)

Gate-Drain Charge

DRAIN-SOURCE DIODE CHARACTERISTICS

Drain-Source Diode Forward Voltage

Continuous Drain-Source Current

Pulsed Drain-Source Current

Reverse Recovery Time

Reverse Recovery Charge

V_SD

I_SD

V_GS= 0 V, I_SD= 2.0 A

1.4

2.0

8.0

I_SM

t_RR

V_GS= 0 V, I_SD= 2.4A,

di/dt = 100 A/µs (Note4)

180

µC

Q_RR

0.72

Note: 1. Repetitive Rating : Pulse width limited by T_J

2. L=64mH, I_AS=2.0A, V_DD=50V, R_G=25 Ω, Starting T_J= 25°C

3. I_SD≤ 2.4A, di/dt ≤200A/µs, V_DD≤ BV_DSS, Starting T_J= 25°C

4. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%

5. Essentially independent of operating temperature

UNISONIC TECHNOLOGIES CO., LTD

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QW-R502-182,A

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