Datasheet > 2N60KG-TF3-T

2N60KG-TF3-T

更新时间： 2022-12-29 21:39:23

品牌	Logo	应用领域
友顺 - UTC		/
页数	文件大小	规格书
7页	253K
描述
N-CHANNEL POWER MOSFET

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2N60KG-TF3-T 数据手册

2N60K-MT

Power MOSFET



ABSOLUTE MAXIMUM RATINGS (T_C=25°С, unless otherwise specified)

PARAMETER

SYMBOL

V_DSS

V_GSS

I_AR

RATINGS

600

±30

2.0

UNIT

Drain-Source Voltage

Gate-Source Voltage

Avalanche Current (Note 2)

Continuous

I_D

2.0

Drain Current

Pulsed (Note 2)

Single Pulsed (Note 3)

Repetitive (Note 2)

I_DM

8.0

E_AS

V/ns

Avalanche Energy

E_AR

4.5

Peak Diode Recovery dv/dt (Note 4)

dv/dt

4.5

SOT-223

TO-220

TO-220F/TO-220F1

TO-220F3

Power Dissipation

P_D

TO-220F2

TO-251/TO-251S

TO-251S2/TO-251S4

TO-252/TO-252-4

TO-252D

Junction Temperature

Operating Temperature

Storage Temperature

T_J

+150

°С

T_OPR

T_STG

-55 ~ +150

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating : Pulse width limited by T_J

3. L=42.5mH, I_AS=2.0A, V_DD=50V, R_G=25 Ω, Starting T_J= 25°C

4. I_SD≤2.4A, di/dt≤200A/μs, V_DD≤ BV_DSS, Starting T_J= 25°C



THERMAL DATA

PARAMETER

SOT-223

SYMBOL

RATINGS

150

UNIT

°C/W

TO-220/TO-220F

TO-220F1/TO-220F2

TO-220F3

62.5

°C/W

Junction to Ambient

θ_JA

TO-251/TO-251S

TO-251S2/TO-251S4

TO-252/TO-252-4

TO-252D

100

°C/W

SOT-223

°C/W

TO-220

2.32

TO-220F/TO-220F1

TO-220F3

5.95

5.43

°C/W

Junction to Case

θ_JC

TO-220F2

TO-251/TO-251S

TO-251S2/TO-251S4

TO-252/TO-252-4

TO-252D

2.87

°C/W

UNISONIC TECHNOLOGIES CO., LTD

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