Datasheet > 2N60KG-T92-R

2N60KG-T92-R

更新时间： 2022-02-26 09:08:24

品牌	Logo	应用领域
友顺 - UTC		/
页数	文件大小	规格书
6页	226K
描述
2A, 600V N-CHANNEL POWER MOSFET

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2N60KG-T92-R 数据手册

2N60K

Power MOSFET



ELECTRICAL CHARACTERISTICS (T_C=25°С, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BV_DSS

I_DSS

V_GS= 0V, I_D= 250μA

600

_DS= 600V, V_GS= 0V

V_DS= 480V, T_C=125°С

_GS= 30V, V_DS= 0V

V_GS= -30V, V_DS= 0V

μA

Drain-Source Leakage Current

Gate-Source Leakage Current

100 μA

100 nA

-100 nA

V/°С

Forward

Reverse

I_GSS

Breakdown Voltage Temperature Coefficient △BV_DSS/△T_JI_D=250μA, Referenced to 25°C

0.4

ON CHARACTERISTICS

Gate Threshold Voltage

V_GS(TH)

R_DS(ON)

V_DS= V_GS, I_D= 250μA

2.0

4.0

6.5

Static Drain-Source On-State Resistance

DYNAMIC CHARACTERISTICS

Input Capacitance

V_GS= 10V, I_D=1A

Ω

C_ISS

C_OSS

C_RSS

270 350 pF

V_DS=25V, V_GS=0V,

Output Capacitance

f =1MHz

Reverse Transfer Capacitance

SWITCHING CHARACTERISTICS

Turn-On Delay Time

t_{D (ON)}

t_R

t_D(OFF)

t_F

Turn-On Rise Time

V_DD=300V, I_D=2.4A,

R_G=25Ω (Note 1, 2)

Turn-Off Delay Time

Turn-Off Fall Time

Total Gate Charge

Q_G

9.0

4.3

1.6

V_DS=480V, V_GS=10V,

Gate-Source Charge

Q_GS

Q_GD

I_D=2.4A (Note 1, 2)

Gate-Drain Charge

DRAIN-SOURCE DIODE CHARACTERISTICS

Drain-Source Diode Forward Voltage

Continuous Drain-Source Current

Pulsed Drain-Source Current

Reverse Recovery Time

V_SD

I_SD

I_SM

t_rr

V_GS= 0 V, I_SD= 2.0 A

1.4

2.0

8.0

180

μC

V_GS= 0 V, I_SD= 2.4A,

di/dt = 100 A/μs (Note1)

Reverse Recovery Charge

Q_RR

0.72

Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle≤2%

2. Essentially independent of operating temperature

UNISONIC TECHNOLOGIES CO., LTD

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QW-R502-819.C

www.unisonic.com.tw

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