Datasheet > 2N60KG-T92-B

2N60KG-T92-B

更新时间： 2022-02-26 09:08:24

品牌	Logo	应用领域
友顺 - UTC		/
页数	文件大小	规格书
6页	226K
描述
2A, 600V N-CHANNEL POWER MOSFET

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2N60KG-T92-B 数据手册

2N60K

Power MOSFET



ABSOLUTE MAXIMUM RATINGS (T_C=25°С, unless otherwise specified)

PARAMETER

SYMBOL

V_DSS

V_GSS

I_AR

RATINGS

UNIT

Drain-Source Voltage

Gate-Source Voltage

600

±30

Avalanche Current (Note 2)

2.0

Continuous

I_D

2.0

Drain Current

Pulsed (Note 2)

I_DM

8.0

Single Pulsed (Note 3)

Repetitive (Note 2)

E_AS

V/ns

Avalanche Energy

E_AR

4.5

Peak Diode Recovery dv/dt (Note 4)

TO-220

dv/dt

4.5

TO-220F/TO-220F1

Power Dissipation

(T_C=25°С)

P_D

TO-251S/TO-252

TO-92

2.3

Junction Temperature

Operating Temperature

Storage Temperature

T_J

+150

-55 ~ +150

°С

T_OPR

T_STG

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating : Pulse width limited by T_J

3. L=25mH, I_AS=2.0A, V_DD=50V, R_G=25 Ω, Starting T_J= 25°C

4. I_SD≤2.4A, di/dt≤200A/μs, V_DD≤ BV_DSS, Starting T_J= 25°C



THERMAL DATA

PARAMETER

PACKAGE

SYMBOL

RATINGS

62.5

UNIT

TO-220/TO-220F

TO-220F1

°С/W

Junction to Ambient

Junction to Case

θ_JA

TO-251S/TO-252

TO-92

100

°С/W

TO-220

2.32

5.5

TO-220F1/TO-220F

TO-251S/TO-252

TO-92

θ_Jc

2.87

UNISONIC TECHNOLOGIES CO., LTD

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www.unisonic.com.tw

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