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2N6044BV PDF预览

2N6044BV

更新时间: 2023-01-02 16:14:08
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
61页 418K
描述
8A, 80V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN

2N6044BV 数据手册

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*ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted)  
C
Characteristic  
Symbol  
Min  
Max  
Unit  
OFF CHARACTERISTICS  
Collector–Emitter Sustaining Voltage  
V
Vdc  
CEO(sus)  
(I = 100 mAdc, I = 0)  
2N6040, 2N6043  
2N6041, 2N6044  
2N6042, 2N6045  
60  
80  
100  
C
B
Collector Cutoff Current  
I
µA  
µA  
CEO  
(V  
CE  
(V  
CE  
(V  
CE  
= 60 Vdc, I = 0)  
2N6040, 2N6043  
2N6041, 2N6044  
2N6042, 2N6045  
20  
20  
20  
B
= 80 Vdc, I = 0)  
B
= 100 Vdc, I = 0)  
B
Collector Cutoff Current  
I
CEX  
(V  
CE  
(V  
CE  
(V  
CE  
(V  
CE  
(V  
CE  
(V  
CE  
= 60 Vdc, V  
= 80 Vdc, V  
= 100 Vdc, V  
= 60 Vdc, V  
= 80 Vdc, V  
= 100 Vdc, V  
= 1.5 Vdc)  
= 1.5 Vdc)  
= 1.5 Vdc)  
= 1.5 Vdc, T = 150 C)  
= 1.5 Vdc, T = 150 C)  
C
= 1.5 Vdc, T = 150 C)  
2N6040, 2N6043  
2N6041, 2N6044  
2N6042, 2N6045  
2N6040, 2N6043  
2N6041, 2N6044  
2N6042, 2N6045  
20  
20  
20  
200  
200  
200  
BE(off)  
BE(off)  
BE(off)  
BE(off)  
BE(off)  
BE(off)  
C
C
Collector Cutoff Current  
I
µA  
CBO  
(V  
CB  
(V  
CB  
(V  
CB  
= 60 Vdc, I = 0)  
E
2N6040, 2N6043  
2N6041, 2N6044  
2N6042, 2N6045  
20  
20  
20  
= 80 Vdc, I = 0)  
E
= 100 Vdc, I = 0)  
E
Emitter Cutoff Current (V  
= 5.0 Vdc, I = 0)  
I
EBO  
2.0  
mAdc  
BE  
C
ON CHARACTERISTICS  
DC Current Gain  
h
FE  
(I = 4.0 Adc, V  
= 4.0 Vdc)  
= 4.0 Vdc)  
= 4.0 Vdc)  
2N6040, 41, 2N6043, 44  
2N6042, 2N6045  
All Types  
1000  
1000  
100  
20.000  
20,000  
C
CE  
CE  
CE  
(I = 3.0 Adc, V  
C
(I = 8.0 Adc, V  
C
Collector–Emitter Saturation Voltage  
(I = 4.0 Adc, I = 16 mAdc)  
V
Vdc  
CE(sat)  
BE(sat)  
2N6040, 41, 2N6043, 44  
2N6042, 2N6045  
All Types  
2.0  
2.0  
4.0  
C
B
(I = 3.0 Adc, I = 12 mAdc)  
C
C
B
B
(I = 8.0 Adc, I = 80 Adc)  
Base–Emitter Saturation Voltage (I = 8.0 Adc, I = 80 mAdc)  
V
4.5  
2.8  
Vdc  
Vdc  
C
B
Base–Emitter On Voltage (I = 4.0 Adc, V  
C
= 4.0 Vdc)  
V
BE(on)  
CE  
DYNAMIC CHARACTERISTICS  
Small Signal Current Gain (I = 3.0 Adc, V  
C
= 4.0 Vdc, f = 1.0 MHz)  
|h  
fe  
|
4.0  
CE  
Output Capacitance  
2N6040/2N6042  
2N6043/2N6045  
C
300  
200  
pF  
ob  
(V  
CB  
= 10 Vdc, I = 0, f = 0.1 MHz)  
E
Small–Signal Current Gain (I = 3.0 Adc, V  
C
= 4.0 Vdc, f = 1.0 kHz)  
h
300  
CE  
fe  
* Indicates JEDEC Registered Data.  
5.0  
t
s
3.0  
2.0  
V
CC  
30 V  
R & R VARIED TO OBTAIN DESIRED CURRENT LEVELS  
B
C
D MUST BE FAST RECOVERY TYPE, eg:  
1
t
f
1N5825 USED ABOVE I 100 mA  
B
1.0  
R
C
SCOPE  
MSD6100 USED BELOW I 100 mA  
B
0.7  
0.5  
TUT  
V
approx  
+8.0 V  
2
R
B
0.3  
0.2  
t
r
D
V
= 30 V  
1
8.0 k  
CC  
51  
120  
0
I /I = 250  
C B  
= I  
I
V
1
approx  
–12 V  
B1 B2  
T = 25°C  
+4.0 V  
0.1  
0.07  
0.05  
J
PNP  
NPN  
25 µs  
t @ V  
BE(off)  
= 0 V  
2.0 3.0  
d
for t and t , D is disconnected  
and V = 0  
For NPN test circuit reverse all polarities and D1.  
d
r
1
2
t , t 10 ns  
r f  
DUTY CYCLE = 1.0%  
0.1  
0.2 0.3  
0.5 0.7 1.0  
5.0 7.0 10  
I , COLLECTOR CURRENT (AMP)  
C
Figure 2. Switching Times Equivalent Circuit  
3–90  
Figure 3. Switching Times  
Motorola Bipolar Power Transistor Device Data  

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