ON Semiconductor)
PNP
2N6040
Plastic Medium-Power
Complementary Silicon
Transistors
. . . designed for general–purpose amplifier and low–speed
switching applications.
2N6042
*
*
2N6043
NPN
2N6045
• High DC Current Gain –
h
= 2500 (Typ) @ I = 4.0 Adc
FE
• Collector–Emitter Sustaining Voltage – @ 100 mAdc –
= 60 Vdc (Min) – 2N6040, 2N6043
C
*ON Semiconductor Preferred Device
V
CEO(sus)
= 100 Vdc (Min) – 2N6042, 2N6045
• Low Collector–Emitter Saturation Voltage –
= 2.0 Vdc (Max) @ I = 4.0 Adc – 2N6043,44
DARLINGTON
8 AMPERE
COMPLEMENTARY
SILICON
POWER TRANSISTORS
60–100 VOLTS
75 WATTS
V
CE(sat)
C
= 2.0 Vdc (Max) @ I = 3.0 Adc – 2N6042, 2N6045
C
• Monolithic Construction with Built–In Base–Emitter Shunt Resistors
MAXIMUM RATINGS (1)
2N6040
2N6043
2N6042
2N6045
Rating
Symbol
Unit
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
V
60
60
100
100
Vdc
Vdc
Vdc
Adc
CEO
V
CB
EB
V
5.0
4
Collector Current – Continuous
Peak
I
C
8.0
16
Base Current
I
B
120
mAdc
STYLE 1:
Total Power Dissipation @ T = 25_C
P
75
0.60
Watts
PIN 1. BASE
2. COLLECTOR
3. EMITTER
C
D
Derate above 25_C
W/_C
1
4. COLLECTOR
Operating and Storage Junction,
Temperature Range
T , T
J stg
–65 to +150
_C
2
3
THERMAL CHARACTERISTICS
Characteristic
CASE 221A–09
TO–220AB
Symbol
Max
1.67
57
Unit
_C/W
_C/W
Thermal Resistance, Junction to Case
θ
JC
Thermal Resistance, Junction to Ambient
(1) Indicates JEDEC Registered Data.
θ
JA
T
A
T
C
4.0 80
3.0 60
T
C
2.0 40
1.0 20
T
A
0
0
0
20
40
60
80
100
120
140
160
T, TEMPERATURE (°C)
Figure 1. Power Derating
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
Semiconductor Components Industries, LLC, 2002
1
Publication Order Number:
April, 2002 – Rev. 4
2N6040/D