2N5432/5433/5434
Vishay Siliconix
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)
A
Limits
2N5432
2N5433
2N5434
Parameter
Symbol
Test Conditions
Typa Min Max Min Max Min Max Unit
Static
Gate-Source
Breakdown Voltage
V
I
G
= –1 ꢁA , V = 0 V
–32
–25
–25
–25
(BR)GSS
DS
V
Gate-Source Cutoff Voltage
V
V
= 5 V, I = 3 nA
–4
–10
–3
–9
–1
–4
GS(off)
DS
D
b
Saturation Drain Current
I
V
= 15 V, V = 0 V
150
100
30
mA
pA
nA
DSS
DS
GS
V
= –15 V, V = 0 V
–5
–10
–10
10
–200
–200
–200
–200
–200
–200
GS
DS
Gate Reverse Current
I
GSS
T
A
= 150_C
c
Gate Operating Current
I
G
V
V
= 10 V, I = 10 mA
DG
D
pA
= 5 V, V = –10 V
200
200
50
200
200
70
200
200
100
10
DS
GS
Drain Cutoff Current
I
D(off)
T
A
= 150_C
20
nA
mV
ꢀ
Drain-Source On-Voltage
V
DS(on)
V
= 0 V, I = 10 mA
D
GS
Drain-Source On-Resistance
r
2
5
7
DS(on)
c
Gate-Source Forward Voltage
V
I
G
= 1 mA , V = 0 V
0.7
V
GS(F)
DS
Dynamic
Common-Source
Forward Transconductance
g
17
mS
ꢁS
ꢀ
fs
c
V
= 5 V, I = 10 mA
D
f = 1 kHz
DS
Common-Source
Output Conductance
g
os
600
c
V
= 0 V, I = 0 mA
D
f = 1 kHz
GS
Drain-Source On-Resistance
r
5
7
10
30
15
ds(on)
Common-Source
Input Capacitance
C
iss
20
11
30
15
30
15
V
= 0 V, V = –10 V
DS
GS
pF
f = 1 MHz
Common-Source
Reverse Transfer Capacitance
C
rss
Equivalent Input
Noise Voltage
V
= 5 V, I = 10 mA
D
f = 1 kHz
nV⁄
√Hz
DS
e
n
3.5
c
Switching
t
2
0.5
4
4
1
4
1
4
1
d(on)
b
Turn-On Time
t
r
V
= 1.5 V, V
See Switching Circuit
= 0 V
DD
GS(H)
ns
t
6
6
6
d(off)
b
Turn-Off Time
t
f
18
30
30
30
Notes
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
b. Pulse test: PW v300 ꢁs duty cycle v3%.
NIP
c. This parameter not registered with JEDEC.
Document Number: 70245
S-04028—Rev. F, 04-Jun-01
www.vishay.com
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