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2N5302 PDF预览

2N5302

更新时间: 2024-01-04 23:43:31
品牌 Logo 应用领域
美高森美 - MICROSEMI 晶体晶体管功率双极晶体管局域网高功率电源
页数 文件大小 规格书
2页 62K
描述
NPN HIGH POWER SILICON TRANSISTOR

2N5302 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:TO-204AA
包装说明:TO-3, 2 PIN针数:2
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.09
外壳连接:COLLECTOR最大集电极电流 (IC):30 A
集电极-发射极最大电压:60 V配置:SINGLE
最小直流电流增益 (hFE):15JEDEC-95代码:TO-3
JESD-30 代码:O-MBFM-P2JESD-609代码:e3
元件数量:1端子数量:2
封装主体材料:METAL封装形状:ROUND
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):260
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:NO端子面层:MATTE TIN (315)
端子形式:PIN/PEG端子位置:BOTTOM
处于峰值回流温度下的最长时间:10晶体管元件材料:SILICON
标称过渡频率 (fT):4 MHzBase Number Matches:1

2N5302 数据手册

 浏览型号2N5302的Datasheet PDF文件第1页 
2N5302, 2N5303 JAN SERIES  
Symbol  
ELECTRICAL CHARACTERISTICS  
Characteristics  
Min.  
Max.  
Unit  
ON CHARACTERISTICS  
Forward-Current Transfer Ratio  
IC = 1.0 Adc, VCE = 2.0 Vdc  
IC = 15 Adc, VCE = 2.0 Vdc  
IC = 10 Adc, VCE = 2.0 Vdc  
IC = 30 Adc, VCE = 4.0 Vdc  
IC = 20 Adc, VCE = 4.0 Vdc  
Base-Emitter Saturation Voltage  
IC = 10 Adc, IB = 1.0 Adc  
All Types  
2N5302  
2N5303  
2N5302  
2N5303  
40  
15  
15  
5.0  
5.0  
60  
60  
hFE  
All Types  
2N5302  
2N5303  
2N5302  
2N5303  
1.7  
1.8  
2.0  
2.5  
2.5  
IC = 15 Adc, IB = 1.5 Adc  
IC = 15 Adc, IB = 1.5 Adc  
IC = 20 Adc, IB = 2.0 Adc  
IC = 20 Adc, IB = 4.0 Adc  
Vdc  
Vdc  
VBE(sat)  
Base-Emitter Non-Saturation Voltage  
VCE = 2.0 Vdc; IC = 15 Adc  
VCE = 2.0 Vdc; IC = 10 Adc  
VCE = 4.0 Vdc; IC = 30 Adc  
VCE = 4.0 Vdc; IC = 20 Adc  
Collector-Emitter Saturation Voltage  
IC = 10 Adc, IB = 1.0 Adc  
IC = 10 Adc, IB = 1.0 Adc  
IC = 15 Adc, IB = 1.5 Adc  
IC = 15 Adc, IB = 1.5 Adc  
IC = 20 Adc, IB = 2.0 Adc  
2N5302  
2N5303  
2N5302  
2N5303  
1.8  
1.5  
3.0  
2.5  
VBE  
2N5302  
2N5303  
2N5302  
2N5303  
2N5302  
2N5303  
2N5302  
0.75  
1.0  
1.0  
1.5  
2.0  
2.0  
3.0  
Vdc  
VCE(sat)  
IC = 20 Adc, IB = 4.0 Adc  
IC = 30Adc, IB = 6.0 Adc  
DYNAMIC CHARACTERISTICS  
Magnitude of Small-Signal Short Circuit  
Forward Current Transfer Ratio  
IC = 1.0 Adc, VCE = 10 Vdc, f = 1.0 MHz  
Output Capacitance  
VCB = 10 Vdc, IE = 0, 100 kHz £ f £ 1.0 MHz  
SWITCHING CHARACTERISTICS  
Delay Time  
2.0  
40  
½hfe½  
800  
pF  
Cobo  
td  
tr  
ts  
tf  
0.2  
0.9  
2.0  
1.0  
ms  
ms  
ms  
ms  
Rise Time  
VCC = 30 Vdc; IC = 10 Adc; IB = 1.0 Adc  
Storage Time  
Fall Time  
SAFE OPERATING AREA  
DC Tests: TC = 250C, 1 Cycle, t ³ 1.0 s  
Test 1  
VCE = 6.67 Vdc, IC = 30 Adc  
VCE = 10 Vdc, IC = 20 Adc  
Test 2  
2N5302  
2N5303  
VCE = 20 Vdc, IC = 10 Adc  
Test 3  
VCE = 40 Vdc, IC = 3.0Adc  
Test 4  
2N5302; 2N5303  
2N5302; 2N5303  
VCE = 50 Vdc, IC = 600 mAdc  
VCE = 60 Vdc, IC = 600 mAdc  
2N5302  
2N5303  
Clamped Switching: TA = 250C, VCE = 15 Vdc  
Clamp Voltage = 60 Vdc, IC = 30 Adc  
2N5302  
Clamp Voltage = 80 Vdc, IC = 20 Adc  
2N5303  
6 Lake Street, Lawrence, MA 01841  
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803  
120101  
Page 2 of 2  

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