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2N5210J05Z PDF预览

2N5210J05Z

更新时间: 2024-01-07 06:10:42
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 放大器晶体管
页数 文件大小 规格书
11页 570K
描述
100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, 3 PIN

2N5210J05Z 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-92
包装说明:CYLINDRICAL, O-PBCY-T3针数:3
Reach Compliance Code:compliant风险等级:5.07
其他特性:LOW NOISE最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:50 V配置:SINGLE
最小直流电流增益 (hFE):250JESD-30 代码:O-PBCY-T3
JESD-609代码:e3湿度敏感等级:NOT APPLICABLE
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):NOT APPLICABLE极性/信道类型:NPN
认证状态:Not Qualified表面贴装:NO
端子面层:MATTE TIN端子形式:THROUGH-HOLE
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT APPLICABLE
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):30 MHzBase Number Matches:1

2N5210J05Z 数据手册

 浏览型号2N5210J05Z的Datasheet PDF文件第2页浏览型号2N5210J05Z的Datasheet PDF文件第3页浏览型号2N5210J05Z的Datasheet PDF文件第4页浏览型号2N5210J05Z的Datasheet PDF文件第5页浏览型号2N5210J05Z的Datasheet PDF文件第6页浏览型号2N5210J05Z的Datasheet PDF文件第7页 
2N5210  
TO-92  
C
B
E
NPN General Purpose Amplifier  
This device is designed for low noise, high gain, general purpose  
amplifier applications at collector currents from 1µA to 50 mA.  
Absolute Maximum Ratings*  
TA= 25°C unless otherwise noted  
Symbol  
Parameter  
Value  
Units  
VCEO  
VCBO  
VEBO  
IC  
Collector-Emitter Voltage  
50  
50  
V
V
Collector-Base Voltage  
Emitter-Base Voltage  
4.5  
V
Collector Current - Continuous  
Operating and Storage Junction Temperature Range  
100  
mA  
-55 to +150  
C
°
TJ, Tstg  
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1) These ratings are based on a maximum junction temperature of 150 degrees C.  
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
Thermal Characteristics  
TA= 25°C unless otherwise noted  
Symbol  
Characteristic  
Max  
Units  
2N5210  
PD  
Total Device Dissipation  
Derate above 25 C  
625  
5.0  
mW  
mW/ C  
°
°
Thermal Resistance, Junction to Case  
83.3  
Rθ  
C/W  
°
JC  
Thermal Resistance, Junction to Ambient  
200  
Rθ  
C/W  
°
JA  
2N5210, Rev A  
2001 Fairchild Semiconductor Corporation  

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