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2N5088D27Z PDF预览

2N5088D27Z

更新时间: 2024-11-27 10:41:39
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
18页 553K
描述
Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-92

2N5088D27Z 数据手册

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2N5088  
2N5089  
MMBT5088  
MMBT5089  
C
E
TO-92  
C
B
B
SOT-23  
Mark: 1Q / 1R  
E
NPN General Purpose Amplifier  
This device is designed for low noise, high gain, general purpose  
amplifier applications at collector currents from 1µA to 50 mA.  
Absolute Maximum Ratings*  
TA= 25°C unless otherwise noted  
Symbol  
Parameter  
Value  
Units  
VCEO  
Collector-Emitter Voltage  
Collector-Base Voltage  
30  
25  
35  
30  
4.5  
V
V
V
V
V
2N5088  
2N5089  
2N5088  
2N5089  
VCBO  
VEBO  
IC  
Emitter-Base Voltage  
Collector Current - Continuous  
100  
mA  
Operating and Storage Junction Temperature Range  
-55 to +150  
C
°
TJ, Tstg  
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1) These ratings are based on a maximum junction temperature of 150 degrees C.  
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
Thermal Characteristics  
TA= 25°C unless otherwise noted  
Symbol  
Characteristic  
Max  
Units  
2N5088  
2N5089  
*MMBT5088  
*MMBT5089  
PD  
Total Device Dissipation  
Derate above 25 C  
625  
5.0  
350  
2.8  
mW  
mW/ C  
°
°
Thermal Resistance, Junction to Case  
83.3  
Rθ  
C/W  
°
JC  
Thermal Resistance, Junction to Ambient  
200  
357  
Rθ  
C/W  
°
JA  
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."  
2001 Fairchild Semiconductor Corporation  
2N5088/2N5089/MMBT5088/MMBT5089, Rev A  

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