Datasheet > 2N5051TIN/LEAD

2N5051TIN/LEAD

更新时间： 2024-02-09 20:17:14

品牌	Logo	应用领域
CENTRAL		/
页数	文件大小	规格书
3页	406K
描述
Power Bipolar Transistor,

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技术参数
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2N5051TIN/LEAD 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.71
Base Number Matches：	1

2N5051TIN/LEAD 数据手册

2N5050

2N5051

2N5052

www.centralsemi.com

DESCRIPTION:

SILICON

The CENTRAL SEMICONDUCTOR 2N5050, 2N5051,

and 2N5052 are silicon NPN transistors designed for

general purpose amplifier and switching applications.

NPN POWER TRANSISTORS

MARKING: FULL PART NUMBER

TO-66 CASE

MAXIMUM RATINGS: (T =25°C)

SYMBOL

2N5050

125

2N5051

150

2N5052

200

UNITS

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

CBO

CEO

EBO

125

150

6.0

200

Continuous Collector Current

Continuous Base Current

Power Dissipation

2.0

1.0

Operating Junction Temperature

Storage Temperature

-65 to +175

-65 to +200

3.76

°C

°C/W

stg

Thermal Resistance



ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

=Rated V

, V

=1.5V

=1.5V, T =150°C

0.5

5.0

0.1

CEX

CEO

EBO

CEO BE(off)

=Rated V , V

CEO BE(off)

=62.5V (2N5050)

=75V (2N5051)

=100V (2N5052)

=6.0V

I =200mA (2N5050)

125

150

200

CEO

CE(SAT)

BE(ON)

I =200mA (2N5051)

I =200mA (2N5052)

I =0.75A, I =0.1A

1.0

5.0

1.2

100

I =2.0A, I =0.4A

=5.0V, I =0.75A

5.0

=5.0V, I =1.0A

=5.0V, I =2.0A

=10V, I =250mA, f=1.0kHz

=10V, I =250mA, f=5.0MHz

MHz

R0 (15-January 2019)

12 3

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