Datasheet > 2N5052

2N5052

更新时间： 2024-02-02 02:32:09

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
3页	126K
描述
Silicon NPN Power Transistors

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技术参数
数据手册

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2N5052 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.69
Base Number Matches：	1

2N5052 数据手册

Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors

2N5050 2N5051 2N5052

DESCRIPTION

·With TO-66 package

·High breakdown voltage

·Excellent safe operating area

APPLICATIONS

·Designed for driver circuits,switching

and amplifier applications

PINNING

DESCRIPTION

Base

Emitter

Fig.1 simplified outline (TO-66) and symbol

Collector

Absolute maximum ratings(Ta=℃)

SYMBOL

PARAMETER

CONDITIONS

VALUE

125

150

200

125

150

200

UNIT

2N5050

2N5051

2N5052

2N5050

2N5051

2N5052

V_CBO

Collector-base voltage

Open emitter

V_CEO

Collector-emitter voltage

Open base

Open collector

T_C=25℃

V_EBO

I_C

Emitter-base voltage

Collector current

P_D

T_j

Total Power Dissipation

Junction temperature

Storage temperature

℃

150

-65~200

T_stg

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

VALUE

UNIT

R_{th j-c}

Thermal resistance junction to case

7.0

℃/W

12 3

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