生命周期: | Active | 包装说明: | , |
Reach Compliance Code: | unknown | 风险等级: | 5.59 |
最大集电极电流 (IC): | 0.1 A | 配置: | Single |
最小直流电流增益 (hFE): | 20 | 最高工作温度: | 175 °C |
极性/信道类型: | PNP | 最大功率耗散 (Abs): | 0.36 W |
子类别: | Other Transistors | 表面贴装: | NO |
标称过渡频率 (fT): | 800 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2N5058 | SEME-LAB |
获取价格 |
NPN EPITAXIAL PLANAR BIPOLAR TRANSISTOR | |
2N5058 | NJSEMI |
获取价格 |
NPN TO-39/TO-5 | |
2N5058 | CENTRAL |
获取价格 |
NPN SILICON TRANSISTOR | |
2N5058LEADFREE | CENTRAL |
获取价格 |
暂无描述 | |
2N5059 | NJSEMI |
获取价格 |
NPN TO-39/TO-5 | |
2N5059 | CENTRAL |
获取价格 |
NPN SILICON TRANSISTOR | |
2N5059 | MICROSEMI |
获取价格 |
Small Signal Bipolar Transistor, 0.15A I(C), 250V V(BR)CEO, 1-Element, NPN, Silicon, TO-39 | |
2N5059PBFREE | CENTRAL |
获取价格 |
Small Signal Bipolar Transistor, | |
2N5060 | NJSEMI |
获取价格 |
SILICON CONTROLLED RECTIFIER | |
2N5060 | DIGITRON |
获取价格 |
Silicon Controlled Rectifier; Max Peak Repetitive Reverse Voltage: 30; Max TMS Bridge Inpu |