生命周期: | Obsolete | 包装说明: | CYLINDRICAL, O-MBCY-W4 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.21.00.95 | 风险等级: | 5.46 |
最小漏源击穿电压: | 50 V | 最大漏极电流 (ID): | 0.008 A |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-71 |
JESD-30 代码: | O-MBCY-W4 | 端子数量: | 4 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | METAL |
封装形状: | ROUND | 封装形式: | CYLINDRICAL |
极性/信道类型: | N-CHANNEL | 认证状态: | Not Qualified |
表面贴装: | NO | 端子形式: | WIRE |
端子位置: | BOTTOM | 晶体管元件材料: | SILICON |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
2N5046 | INTERFET | Small Signal Field-Effect Transistor, N-Channel, Junction FET |
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2N5046 | VISHAY | Small Signal Field-Effect Transistor, N-Channel, Junction FET, |
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2N5047 | VISHAY | Small Signal Field-Effect Transistor, N-Channel, Junction FET, |
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|
2N5047 | TI | 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-71 |
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|
2N5048 | ETC | COLLECTOR CURRENT = 10 AMPS NPN TYPES |
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2N5049 | ETC | COLLECTOR CURRENT = 10 AMPS NPN TYPES |
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