7516 Central Industrial Drive
Riviera Beach, Florida
33404
PHONE: (561) 842-0305
FAX: (561) 845-7813
2N3583
APPLICATIONS:
·
·
·
Off-Line Inverters
Switching Regulators
Motor Controls
·
·
·
Deflection Circuits
DC-DC Converters
High Voltage Amplifiers
5 Amp, 250V,
High Voltage
NPN Silicon Power
Transistors
FEATURES:
·
·
·
High Voltage: 250 to 500V
·
·
High Current: 2 Amps
Low VCE (SAT)
Fast Switching: tf < 3msec.
High Power: 35 Watts
DESCRIPTION:
These power transistors are produced by PPC's DOUBLE
DIFFUSED PLANAR process. This technology produces high
voltage devices with excellent switching speeds, frequency
response, gain linearity, saturation voltages, high current gain,
and safe operating areas. They are intended for use in
Commercial, Industrial, and Military power switching, amplifier,
and regulator applications.
Ultrasonically bonded leads and controlled die mount
techniques are utilized to further increase the SOA capability
and inherent reliability of these devices. The temperature
range to 200°C permits reliable operation in high ambients, and
the hermetically sealed package insures maximum reliability
and long life.
TO-66
ABSOLUTE MAXIMUM RATINGS:
SYMBOL
CHARACTERISTIC
VALUE
UNITS
Volts
Volts
Volts
Volts
Amps
Amps
Amps
°C
VCBO
*
Collector-Base Voltage
250
175
VCEO
*
Collector-Emitter Voltage
Collector-Emitter Voltage RBE = 50W
Emitter-Base Voltage
VCER
*
250
VEBO
*
6
IC*
Peak Collector Current
5
IC*
Continuous Collector Current
Base Current
1
1
IB*
TSTG
TJ*
*
*
Storage Temperature
Operating Junction Temperature
Lead Temperature 1/16" from Case for 10 Sec.
-65 to 200
-65 to 200
235
°C
°C
PT*
Power Dissipation
TC = 25°C
35
5.0
Watts
°C/W
q JC
Thermal Impedance
* Indicates JEDEC registered data.
MSC1055.PDF 05-19-99