5秒后页面跳转
2N3585 PDF预览

2N3585

更新时间: 2024-01-21 17:08:29
品牌 Logo 应用领域
SEME-LAB 晶体晶体管装置开关局域网
页数 文件大小 规格书
1页 16K
描述
Bipolar NPN Device in a Hermetically sealed TO66

2N3585 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:TO-66
包装说明:TO-66, 2 PIN针数:2
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.09
外壳连接:COLLECTOR最大集电极电流 (IC):2 A
集电极-发射极最大电压:300 V配置:SINGLE
最小直流电流增益 (hFE):25JEDEC-95代码:TO-66
JESD-30 代码:O-MBFM-P2JESD-609代码:e3
元件数量:1端子数量:2
封装主体材料:METAL封装形状:ROUND
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):260
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:NO端子面层:MATTE TIN (315)
端子形式:PIN/PEG端子位置:BOTTOM
处于峰值回流温度下的最长时间:10晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):10 MHz
Base Number Matches:1

2N3585 数据手册

  
2N3585  
Dimensions in mm (inches).  
Bipolar NPN Device in a  
Hermetically sealed TO66  
Metal Package.  
6.35 (0.250)  
8.64 (0.340)  
3.68  
(0.145) rad.  
3.61 (0.142)  
4.08(0.161)  
rad.  
max.  
Bipolar NPN Device.  
VCEO = 300V  
1
2
IC = 2A  
All Semelab hermetically sealed products  
can be processed in accordance with the  
requirements of BS, CECC and JAN,  
JANTX, JANTXV and JANS specifications  
1.27 (0.050)  
1.91 (0.750)  
4.83 (0.190)  
5.33 (0.210)  
9.14 (0.360)  
min.  
TO66 (TO213AA)  
PINOUTS  
1 – Base  
2 – Emitter  
Case – Collector  
Parameter  
Test Conditions  
Min.  
Typ.  
Max.  
300  
2
Units  
VCEO*  
IC(CONT)  
hFE  
V
A
@ 10/1 (VCE / IC)  
25  
100  
-
ft  
10M  
Hz  
W
PD  
35  
* Maximum Working Voltage  
This is a shortform datasheet. For a full datasheet please contact sales@semelab.co.uk.  
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed  
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.  
Semelab plc.  
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.  
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk  
Generated  
1-Aug-02  

与2N3585相关器件

型号 品牌 描述 获取价格 数据表
2N3585LEADFREE CENTRAL Power Bipolar Transistor, 2A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-66, Metal, 2

获取价格

2N3589 ETC TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 500MA I(C) | TO-37VAR

获取价格

2N3590 NJSEMI SI NPN POWER BJT

获取价格

2N3591 ETC TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 500MA I(C) | CAN

获取价格

2N3592 ETC TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 500MA I(C) | CAN

获取价格

2N3595 NJSEMI SPRINGFIELD, NEW JERSEY 07081

获取价格