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2N3440 PDF预览

2N3440

更新时间: 2024-01-06 18:23:56
品牌 Logo 应用领域
SEME-LAB 晶体晶体管高压
页数 文件大小 规格书
2页 21K
描述
HIGH VOLTAGE NPN TRANSISTORS

2N3440 技术参数

是否无铅: 含铅是否Rohs认证: 符合
生命周期:Active包装说明:SMALL OUTLINE, R-XDSO-N3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:5.15Is Samacsys:N
最大集电极电流 (IC):1 A集电极-发射极最大电压:250 V
配置:SINGLE最小直流电流增益 (hFE):40
JESD-30 代码:R-XDSO-N3JESD-609代码:e4
元件数量:1端子数量:3
封装主体材料:UNSPECIFIED封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:YES端子面层:GOLD OVER NICKEL
端子形式:NO LEAD端子位置:DUAL
处于峰值回流温度下的最长时间:30晶体管元件材料:SILICON
最大关闭时间(toff):10000 ns最大开启时间(吨):1000 ns
Base Number Matches:1

2N3440 数据手册

 浏览型号2N3440的Datasheet PDF文件第2页 
2N3439  
2N3440  
MECHANICAL DATA  
Dimensions in mm (inches)  
HIGH VOLTAGE  
NPN TRANSISTORS  
8.89 (0.35)  
9.40 (0.37)  
7.75 (0.305)  
8.51 (0.335)  
FEATURES  
4.19 (0.165)  
4.95 (0.195)  
• DUAL SILICON PLANAR EPITAXIAL NPN  
TRANSISTOR  
0.89  
(0.035)  
max.  
12.70  
(0.500)  
min.  
7.75 (0.305)  
8.51 (0.335)  
dia.  
• HIGH VOLTAGE  
5.08 (0.200)  
typ.  
APPLICATIONS:  
2.54  
2
(0.100)  
1
3
These devices are particularly suited as dri-  
vers in high-voltage low current inverters,  
switing and series regulators.  
0.66 (0.026)  
1.14 (0.045)  
0.71 (0.028)  
0.86 (0.034)  
45˚  
TO39 PACKAGE  
Pin 1 = Emitter  
Pin 2 = Base  
Pin 3 = Collector  
ABSOLUTE MAXIMUM RATINGS  
(T  
= 25°C unless otherwise stated)  
case  
2N3439  
450V  
2N3440  
300V  
V
V
V
Collector – Base Voltage (I = 0)  
E
CBO  
CEO  
EBO  
Collector – Emitter Voltage (I = 0)  
350V  
250V  
B
Emitter – Base Voltage (I = 0)  
7V  
1A  
C
I
I
Collector Current  
Base Current  
C
0.5A  
5W  
1W  
B
P
Total Power Dissipation at T  
T
25°C  
50°C  
tot  
case  
amb  
T
T
Storage Temperature  
Junction Temperature  
–55 to 200°C  
200°C  
stg  
j
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.  
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk  
Prelim.12/99  

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