Datasheet > 2N3439

2N3439

更新时间： 2024-01-15 12:01:47

品牌	Logo	应用领域
COMSET		晶体晶体管高压
页数	文件大小	规格书
3页	86K
描述
HIGH VOLTAGE TRANSISTOR

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技术参数
数据手册

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2N3439 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	compliant
风险等级：	5.6	JESD-609代码：	e3
峰值回流温度（摄氏度）：	NOT SPECIFIED	端子面层：	Matte Tin (Sn) - with Nickel (Ni) barrier
处于峰值回流温度下的最长时间：	NOT SPECIFIED	Base Number Matches：	1

2N3439 数据手册

NPN 2N3439 – 2N3440

HIGH VOLTAGE TRANSISTOR

The 2N3439 and 2N3440 are high voltage silicon epitaxial transistors

mounted in TO-39 metal package.

They are intended for use in power amplifier, in consumer and

industrial line-operated applications.

These devices are particularity suited as drives in high voltage low

current inverters, switching and series regulators.

Compliance to RoHS.

ABSOLUTE MAXIMUM RATINGS

Value

Symbol

V_CEO

Ratings

Unit

2N3439

2N3440

Collector-Emitter

Voltage

Collector-Base Voltage I_E= 0

Emitter-Base Voltage

Collector Current

Base Current

I_B= 0

350

450

250

300

V_CBO

V_EBO

I_C

I_C= 0

500

I_B

_amb= 25°

P_D

Total Power Dissipation

T_case= 25°

T_J

T_Stg

Junction Temperature

Storage Temperature range

200

-65 to +200

°C

THERMAL CHARACTERISTICS

Symbol

Ratings

Value

Unit

R_thJ-a

R_thJ-c

Thermal Resistance, Junction to ambient

Thermal Resistance, Junction to case

175

°C/W

COMSET SEMICONDUCTORS

1/3

12 3

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