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2N3439CSM4R PDF预览

2N3439CSM4R

更新时间: 2024-01-22 10:13:10
品牌 Logo 应用领域
SEME-LAB 晶体晶体管高压
页数 文件大小 规格书
2页 19K
描述
HIGH VOLTAGE, MEDIUM POWER, NPN TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS

2N3439CSM4R 技术参数

是否Rohs认证: 不符合生命周期:Active
包装说明:SMALL OUTLINE, R-CDSO-N4Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.66
最大集电极电流 (IC):1 A集电极-发射极最大电压:350 V
配置:SINGLE最小直流电流增益 (hFE):40
JESD-30 代码:R-CDSO-N4元件数量:1
端子数量:4最高工作温度:200 °C
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:YES端子形式:NO LEAD
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管元件材料:SILICON标称过渡频率 (fT):15 MHz
Base Number Matches:1

2N3439CSM4R 数据手册

 浏览型号2N3439CSM4R的Datasheet PDF文件第2页 
2N3439CSM4R  
2N3440CSM4R  
HIGH VOLTAGE, MEDIUM POWER, NPN  
TRANSISTOR IN A  
HERMETICALLY SEALED  
CERAMIC SURFACE MOUNT PACKAGE  
FOR HIGH RELIABILITY APPLICATIONS  
MECHANICAL DATA  
Dimensions in mm (inches)  
FEATURES  
• Hermetic Ceramic 4 pin Surface Mount  
Package - LCC3  
1.40 ± 0.15  
(0.055 ± 0.006)  
5.59 ± 0.13  
(0.22 ± 0.005)  
0.25 ± 0.03  
(0.01 ± 0.001)  
• High Voltage Small Signal Type  
• Full Screening Options Available  
• “R” Denotes Reverse Pinning  
0.23  
(0.009)  
rad.  
3
4
2
0.23  
(0.009)  
1
min.  
1.02 ± 0.20  
(0.04 ± 0.008)  
2.03 ± 0.20  
(0.08 ± 0.008)  
APPLICATIONS:  
The 2N3439CSM4 and 2N3440CSM4 are high  
voltage silicon epitaxial planar transistors mounted  
in the popular 4 pin ceramic surface mount  
hermetically sealed package. These products are  
specifically intended for use in High reliability  
systems and can be ordered with a full range of  
screening options from standard Military  
(equivalent to CECC Full Assessment Level)  
through all options up to full space flight level.  
LCC3 PACKAGE  
Underside View  
PAD 1 – Collector  
PAD 2 – Emitter  
PAD 3 – N/C  
PAD 4 – Base  
2N3439CSM4 2N3440CSM4  
ABSOLUTE MAXIMUM RATINGS  
V
V
V
Collector – Base Voltage (I = 0)  
450V  
350V  
7V  
300V  
250V  
7V  
CBO  
CEO  
EBO  
E
Collector – Emitter Voltage (I = 0)  
B
Emitter – Base Voltage (I = 0)  
B
I
I
Collector Current.  
Base Current.  
1A  
1A  
C
0.5A  
0.5W  
0.5A  
0.5W  
B
P
Total Power Dissipation at T  
= 25°C with product  
tot  
amb  
mounted on a suitable PCB to provide a heat path.  
Storage Temperature.  
T
T
65 to +200°C  
+200°C  
stg  
Maximum Junction Temperature.  
j
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. e-mail sales@semelab.co.uk  
Prelim. 11/98  
Website http://www.semelab.co.uk  

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