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2N2955L-T30-Y PDF预览

2N2955L-T30-Y

更新时间： 2024-01-24 08:30:35
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友顺 - UTC 晶体晶体管功率双极晶体管开关局域网
页数 文件大小 规格书
2页 122K
描述
SILICON PNP TRANSISTORS

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2N2955L-T30-Y 技术参数

是否Rohs认证： 符合生命周期：Active
零件包装代码：TO-204AA包装说明：FLANGE MOUNT, O-MBFM-P2
针数：2Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8541.29.00.95
风险等级：5.67最大集电极电流 (IC)：15 A
集电极-发射极最大电压：60 V配置：SINGLE
最小直流电流增益 (hFE)：5JEDEC-95代码：TO-3
JESD-30 代码：O-MBFM-P2元件数量：1
端子数量：2封装主体材料：METAL
封装形状：ROUND封装形式：FLANGE MOUNT
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：PNP
认证状态：Not Qualified表面贴装：NO
端子形式：PIN/PEG端子位置：BOTTOM
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICON标称过渡频率 (fT)：2.5 MHz
Base Number Matches：1

2N2955L-T30-Y 数据手册

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2N2955  
PNP SILICON TRANSISTOR  
„
ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified )  
PARAMETERS  
SYMBOL  
VCBO  
VCEO  
VEBO  
VCEV  
IC  
RATINGS  
UNITS  
Collector-Base Voltage  
100  
V
V
Collector-Emitter Voltage  
Emitter-Base Voltage  
60  
7
70  
V
Collector-Emitter Voltage  
Collector Current  
V
15  
A
Collector Peak Current(1)  
Base Current  
ICM  
15  
A
IB  
7
A
Base Peak Current(1)  
Total Dissipation at Ta=25°C  
Max. Operating Junction Temperature  
Storage Temperature  
IBM  
15  
A
PD  
115  
+200  
-65 ~ 200  
W
°C  
°C  
TJ  
TSTG  
Note 1.Absolute maximum ratings are those values beyond which the device could be permanently damaged.  
Absolute maximum ratings are stress ratings only and functional device operation is not implied.  
„
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN  
TYP  
MAX  
UNIT  
V
OFF CHARACTERISTICS  
Collector-Emitter Sustaining  
Voltage  
VCEO(SUS) IC=200mA, IB=0V  
60  
70  
Collector-Emitter Sustaining  
Voltage  
VCER(SUS) IC=0.2 A, RBE=100Ω  
V
Collector Cut-off Current  
ICEO  
ICEX  
IEBO  
VCE=30V,IB=0  
0.7  
1.0  
5.0  
mA  
VCE=100V, VBE(OFF)=1.5V  
Collector Cut-off Current  
VCE=100V, VBE(OFF)=1.5V,  
mA  
mA  
Ta=150°C  
VBE=7V, IC=0  
Emitter Cut-off Current  
5.0  
70  
ON CHARACTERISTICS  
IC=4A,VCE=4V,  
IC=10A,VCE=4V  
IC=4A, IB=400mA  
IC=10A, IB=3.3A  
20  
5
DC Current Gain(Note 2)  
hFE  
Collector-Emitter Saturation  
Voltage  
1.1  
3.0  
1.5  
VCE(SAT)  
V
V
Base-Emitter On Voltage  
SECOND BREAKDOWN  
Second Breakdown Collector with  
Base Forward Biased  
VBE(ON) IC=4A, VCE=4V  
Is/b  
VCE=60V, T=1.0s, Non-repetitive  
2.87  
A
DYNAMIC CHARACTERISTICS  
Current Gain-Bandwidth Product  
Small-Signal Current Gain  
Small-Signal Current Gain  
Cut-off Frequency  
fT  
IC=0.5A, VCE=10V, f=1MHz  
IC=1A, VCE=4V, f=1kHz  
2.5  
15  
MHz  
kHz  
hFE  
120  
fhFE  
IC=1A, VCE=4V, f=1kHz  
10  
Note 2. Pulse Test: PW≦300μs, Duty Cycle≦2%  
UTC assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or  
other parameters) listed in products specifications of any and all UTC products described or contained  
herein. UTC products are not designed for use in life support appliances, devices or systems where  
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in  
whole or in part is prohibited without the prior written consent of the copyright owner. The information  
presented in this document does not form part of any quotation or contract, is believed to be accurate  
and reliable and may be changed without notice.  
UNISONIC TECHNOLOGIES CO., LTD  
2 of 2  
QW-R205-004,Ca  
www.unisonic.com.tw  
12

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