2N2920AHRT

更新时间： 2024-01-17 17:16:17

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		晶体小信号双极晶体管双极型晶体管
页数	文件大小	规格书
9页	160K
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2N2920AHRT 数据手册

Electrical ratings

2N2920AHR

Electrical ratings

Table 2.

Symbol

Absolute maximum ratings

Parameter

Value

Unit

V_CBO

V_CEO

V_EBO

I_C

Collector-base voltage (I_E= 0)

Collector-emitter voltage (I_B= 0)

Emitter-base voltage (I_C= 0)

Collector current

Total dissipation at T_amb≤ 25 °C

for Root part number 1 ⁽¹⁾

for Root part number 1 ⁽²⁾

for 2N2920AHR ^{(1) (3)}

0.3

0.5

0.6

P_TOT

for 2N2920AHR ^{(2) (3)}

Total dissipation at T_c≤ 25 °C

for Root part number 1 ⁽¹⁾

for Root part number 1 ⁽²⁾

0.75

1.25

T_STG

T_J

Storage temperature

-65 to 200

200

°C

Max. operating junction temperature

1. One section.

2. Both sections.

3. When mounted on a 15 x 15 x 0.6 mm ceramic substrate.

Table 3.

Symbol

Thermal data for through-hole package

Parameter

Value

233

Unit

Thermal resistance junction-case ⁽¹⁾

Thermal resistance junction-case ⁽²⁾

max

°C/W

R_thJC

140

Thermal resistance junction-ambient ⁽¹⁾__

Thermal resistance junction-ambient ⁽²⁾__

max

583

350

°C/W

R_thJA

1. One section.

2. Both sections.

Table 4.

Symbol

Thermal data for SMD package

Parameter

Value

Unit

Thermal resistance junction-ambient ⁽¹⁾⁽³⁾__

Thermal resistance junction-ambient ⁽²⁾⁽³⁾__

max

291

175

°C/W

R_thJA

1. One section.

2. Both sections.

3. When mounted on a 15 x 15 x 0.6 mm ceramic substrate.

2/9

Doc ID 15383 Rev 2

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