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2N2646_12 PDF预览

2N2646_12

更新时间: 2022-05-21 03:40:54
品牌 Logo 应用领域
COMSET 晶体晶体管单结晶体管
页数 文件大小 规格书
2页 124K
描述
SILICON UNIJUNCTION TRANSISTORS

2N2646_12 数据手册

 浏览型号2N2646_12的Datasheet PDF文件第2页 
2N2646 – 2N2647  
SILICON UNIJUNCTION TRANSISTORS  
Silicon Planar Unijunction Transistors have a structure resulting in lower saturation voltage, peak-point  
current and valley current as zell as a much higher base-one peak pulse voltage. In addition, these  
devices are much faster switches.  
The 2N2646 is intended for general purpose industrial applications where circuit economy is of primary  
importance, and is ideal for use in firing circuits for Silicon Controlled Rectifiers and other applications  
where a guaranteed minimum pulse amplitude is required. The 2N2647 is intended for applications where  
a low emitter leakage current and a low peak point emitter current (trigger current) are required and also  
for triggering high power SCR’s.  
Compliance to RoHS  
ABSOLUTE MAXIMUM RATINGS  
Tj=125°C unless otherwise noted  
Symbol  
Ratings  
2N2646 – 2N2647  
Unit  
VB2E  
30  
50  
2
Emitter-Base2 Voltage  
RMS Emitter Current  
V
mA  
A
Ie  
ie  
VB2B1  
PD  
Peak Pulse Emitter Current *  
Interbase Voltage  
RMS power Dissipation  
Junction Temperature  
Storage Temperature  
35  
300  
V
mW  
°C  
°C  
TJ  
-65 to +125  
-65 to +150  
TStg  
Capacitor discharge – 10µF or less, 30volts or less.  
ELECTRICAL CHARACTERISTICS  
TC=25°C unless otherwise noted  
Symbol  
Ratings  
Min.  
Typ. Max. Unit  
2N2646  
2N2647  
0.56  
0.68  
4.7  
-
-
-
0.75  
0.82  
9.1  
η
Intrinsic stand-off ratio  
B2B1 = 10V  
-
V
RBBO  
Interbase Resistance , VB2B1 = 3V  
KΩ  
V
VEB1(sat)  
Emitter Saturation Voltage  
VB2B1 = 10V , IE = 50 mA  
Modulated Interbase Current  
VB2B1 = 10V , IE = 50 mA  
Emitter Revers Current  
-
-
-
15  
-
2.5  
-
IB2(MOD)  
IEO  
V(BR)B1E  
IV  
V
µA  
V
-
12  
-
VB2E = 30 V , IB1 = 0  
Base 1 Emitter breakdown Voltage  
IE =100 µA  
30  
-
2N2646  
2N2647  
2N2646  
2N2647  
4
8
-
-
-
-
-
-
-
5
2
Valley Current , VB2B1 = 20 V  
Peak Current , VB2B1 = 25 V  
mA  
µA  
IP  
-
24/09/2012  
1 | 2  
COMSET SEMICONDUCTORS  

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