生命周期: | Contact Manufacturer | 包装说明: | , |
Reach Compliance Code: | unknown | 风险等级: | 5.61 |
最大集电极电流 (IC): | 3 A | 配置: | Single |
最小直流电流增益 (hFE): | 30 | 最高工作温度: | 95 °C |
极性/信道类型: | PNP | 最大功率耗散 (Abs): | 28 W |
子类别: | Other Transistors | 表面贴装: | NO |
标称过渡频率 (fT): | 0.015 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2N1759 | ETC |
获取价格 |
TRANSISTOR | BJT | PNP | 35V V(BR)CEO | 3A I(C) | MS-7 |
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2N176 | ETC |
获取价格 |
germanium transistors |
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2N1760 | ETC |
获取价格 |
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 3A I(C) | MS-7 |
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2N1761 | ETC |
获取价格 |
TRANSISTOR | BJT | PNP | 65V V(BR)CEO | 3A I(C) | MS-7 |
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2N1762 | ETC |
获取价格 |
TRANSISTOR | BJT | PNP | 75V V(BR)CEO | 3A I(C) | MS-7 |
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2N1768 | NJSEMI |
获取价格 |
POWER TRANSISTORS |
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2N1769 | NJSEMI |
获取价格 |
POWER TRANSISTORS |
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2N1769 | APITECH |
获取价格 |
Power Bipolar Transistor, 3A I(C), 55V V(BR)CEO, 1-Element, NPN, Silicon, Metal, 3 Pin, TO |
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2N1770 | NJSEMI |
获取价格 |
BROAD VOLTAGE RANGE |
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2N1770 | CENTRAL |
获取价格 |
Silicon Controlled Rectifier, 8A I(T)RMS, 4700mA I(T), 25V V(DRM), 25V V(RRM), 1 Element, |
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