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2KBP08M-E PDF预览

2KBP08M-E

更新时间: 2024-01-14 08:11:17
品牌 Logo 应用领域
海湾 - GULFSEMI 二极管
页数 文件大小 规格书
2页 117K
描述
SINGLE PHASE GLASS PASSIVATED BRIDGE RECTIFIER Voltage: 800V Current:2.0A

2KBP08M-E 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:R-PSIP-W4Reach Compliance Code:unknown
风险等级:5.6最小击穿电压:800 V
配置:BRIDGE, 4 ELEMENTS二极管元件材料:SILICON
二极管类型:BRIDGE RECTIFIER DIODEJESD-30 代码:R-PSIP-W4
最大非重复峰值正向电流:60 A元件数量:4
相数:1端子数量:4
最高工作温度:165 °C最低工作温度:-55 °C
最大输出电流:2 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):NOT SPECIFIED最大重复峰值反向电压:800 V
表面贴装:NO端子形式:WIRE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

2KBP08M-E 数据手册

 浏览型号2KBP08M-E的Datasheet PDF文件第2页 
2KBP08M-E  
SINGLE PHASE GLASS  
PASSIVATED BRIDGE RECTIFIER  
Voltage: 800V  
Current:2.0A  
KBPM  
Features  
Glass passivated chip junction  
High case dielectric strength  
High surge current capability  
Ideal for printed circuit board  
Halogen Free  
Mechanical Data  
Terminal: Plated leads solderable per MIL-STD 202E,  
Method 208C  
Case: UL-94 Class V-0 recognized Halogen Free Epoxy  
Polarity: As marked on body  
Dimensions in inches and (millimeters)  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
(single-phase, half -wave, 60HZ, resistive or inductive load rating at 25°C, unless otherwise stated,  
for capacitive load, derate current by 20%)  
Symbol  
2KBP08M-E  
units  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
Vrrm  
Vrms  
Vdc  
800  
560  
800  
V
V
V
Maximum DC blocking voltage  
Maximum average forward rectified output current  
If(av)  
Ifsm  
Vf  
2.0  
60  
A
A
Ta =55℃  
Peak forward surge current single sine-wave  
superimposed on rated load (JEDEC Method)  
Maximum instantaneous forward voltage drop per leg at  
3.14A  
1.1  
15  
V
I2t  
A2Sec  
Rating for fusing (t < 8.3ms)  
5.0  
500  
30  
Maximum DC reverse current at  
rated DC blocking voltage per leg  
Ta = 25°C  
Ta = 125°C  
Ir  
µA  
Rth(ja)  
Rth(jc)  
/W  
pF  
Maximum thermal resistance per leg  
(Note1)  
11  
25  
Typical junction capacitance per leg at 4.0V,1MHz  
Operating junction and storage temperature range  
Cj  
Tj, Tstg  
-55 to +150  
Note:  
1. Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.47 x 047" (12 x 12mm) copper pads  
Rev.A1  
www.gulfsemi.com  

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