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2KBB80R PDF预览

2KBB80R

更新时间: 2024-02-13 21:16:17
品牌 Logo 应用领域
英飞凌 - INFINEON 二极管
页数 文件大小 规格书
3页 67K
描述
2KBB SERIES 1.9A single phase rectifier bridge

2KBB80R 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred包装说明:R-PSIP-W4
针数:4Reach Compliance Code:compliant
HTS代码:8541.10.00.80风险等级:5.63
其他特性:LEAKAGE CURRENT IS NOT AT 25 DEG C配置:BRIDGE, 4 ELEMENTS
二极管元件材料:SILICON二极管类型:BRIDGE RECTIFIER DIODE
最大正向电压 (VF):1 VJESD-30 代码:R-PSIP-W4
最大非重复峰值正向电流:52 A元件数量:4
相数:1端子数量:4
最高工作温度:150 °C最低工作温度:-40 °C
最大输出电流:1.9 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):260认证状态:Not Qualified
最大重复峰值反向电压:800 V最大反向电流:10 µA
表面贴装:NO端子形式:WIRE
端子位置:SINGLE处于峰值回流温度下的最长时间:40

2KBB80R 数据手册

 浏览型号2KBB80R的Datasheet PDF文件第1页浏览型号2KBB80R的Datasheet PDF文件第3页 
2KBB Series  
Reverse voltage ratings and application data  
VRRM, VRSM  
max. peak  
rev. voltage  
TJ = 15°C  
IRM, typical peak  
rev. current per diode  
Application data (see figure 3)  
Part number  
VRSM max.  
recommended AC  
supply voltage  
Cmax max.  
load  
capacitance  
Rmin min.  
source  
resistance  
at rated VRRM  
TJ = 150°C  
V
µA  
µA  
V
µF  
2KBB05, 2KBB05R  
2KBB10, 2KBB10R  
2KBB20, 2KBB20R  
2KBB40, 2KBB40R  
2KBB60, 2KBB60R  
2KBB80, 2KBB80R  
2KBB100, 2KBB100R  
50  
100  
200  
400  
600  
800  
1000  
10  
10  
10  
10  
10  
10  
10  
500  
500  
500  
500  
500  
500  
500  
20  
40  
7000  
5000  
3300  
1600  
1200  
800  
0.3  
0.5  
0.8  
1.5  
2.5  
3.0  
5.0  
80  
125  
250  
380  
500  
600  
Electrical Specification  
Forward Conduction  
Parameters  
2KBB...  
Unit  
Conditions  
IO  
Maximum DC output current  
1.9  
1.5  
50  
A
TC =45°C,Resistive& inductiveload  
TC =45°C,Capacitiveload  
IFSM  
Maximumpeak,one-cycle  
t =6ms  
Followinganyratedload  
non-repetitive surge current,  
condition,and with rated  
52  
t =5ms  
VRRM appliedfollowingsurge  
I2t  
Maximum I2t for fusing,  
initial TJ =TJ max  
12.5  
11.3  
A2s  
A2s  
t =10ms  
t =8.3ms  
RatedVRRM appliedfollowing  
surge, initialTJ =150°C  
17.7  
16.1  
t =10ms  
t =8.3ms  
I2t  
Maximum I2t capability  
177  
A2s  
VRRM followingsurge=0, t=0.1to10ms  
I2tfortimetx=I2t.tx  
forfusing  
VFM  
f
Maximumpeakforwardvoltage  
per diode  
1.1  
V
IO =1.9A(3.0Apk)  
Operatingfrequencyrange  
40 to 2000  
Hz  
Thermal and Mechanical Specifications  
Parameters  
2KBB...  
Unit  
Conditions  
TJ  
Operatingandstorage  
temperaturerange  
-40 to150  
oC  
Tstg  
Wt  
Approximateweight  
4(0.14)  
g(oz)  

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