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2ED2732S01G PDF预览

2ED2732S01G

更新时间: 2024-03-03 10:09:17
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
22页 544K
描述
MOTIX? 160 V high side, low side?SOI based gate driver?with typical 1 A source and 2 A sink curren

2ED2732S01G 数据手册

 浏览型号2ED2732S01G的Datasheet PDF文件第3页浏览型号2ED2732S01G的Datasheet PDF文件第4页浏览型号2ED2732S01G的Datasheet PDF文件第5页浏览型号2ED2732S01G的Datasheet PDF文件第7页浏览型号2ED2732S01G的Datasheet PDF文件第8页浏览型号2ED2732S01G的Datasheet PDF文件第9页 
2ED2738S01D  
160 V, 1 A / 2 A high side, low side SOI gate driver with integrated bootstrap diode  
Test  
Symbol  
VOH  
Definition  
Min.  
Typ.  
Max.  
Units  
Conditions  
High level output voltage  
drop,  
0.54  
V
IO = 100 mA  
0.14  
1
0.8  
50  
2
VOL  
Low level output voltage drop  
Peak output current turn-on1  
Peak output current turn-off1  
Logic “1” input voltage  
Io+  
PW ≤ 10 µs  
PW ≤ 10 µs  
A
V
2
Io-  
VIH  
2.0  
VIL  
Logic “0” input voltage  
Input bias current (Output =  
High)  
25  
ILOGIC IN+  
ILOGIC IN-  
VFBSD  
IFBSD  
RBSD  
VIN = 4 V  
VIN = 0 V  
µA  
Input bias current (Output =  
Low)  
Bootstrap diode forward  
voltage between Vcc and VB  
0.6  
88  
20  
0.8  
110  
25  
1
V
mA  
IF=0.3 mA  
VCC-VB=4 V  
Bootstrap diode forward  
current between Vcc and VB  
133  
30  
VF1=4V,VF2=5  
V
Bootstrap diode resistance  
1 Not subjected to production test, verified by characterization.  
Final Datasheet  
6 of 22  
V 1.0  
www.Infineon.com/SOI  
2023-06-01  

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