Datasheet > 2ED21091S06FXUMA1

2ED21091S06FXUMA1

更新时间： 2024-02-08 10:12:19

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
25页	808K
描述
Half Bridge Based Peripheral Driver,

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2ED21091S06FXUMA1 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	compliant	Factory Lead Time：	26 weeks
风险等级：	5.75	Base Number Matches：	1

2ED21091S06FXUMA1 数据手册

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2ED21091S06F

650 V half bridge gate driver with integrated bootstrap diode

4.3

Static electrical characteristics

(V_CC– COM) = (V_B– V_S) = 15 V, and T_A= 25 °C unless otherwise specified. The V_IL,V_IHand I_INparameters are

referenced to Vss / COM and are applicable to the respective input leads: IN and DT/SD. The V_Oand I_O

parameters are referenced to V_S/ COM and are applicable to the respective output leads HO or LO. The V_CCUV

parameters are referenced to COM. The V_BSUVparameters are referenced to V_S.

Table 5

Symbol

Static electrical characteristics

Definition

V_BSsupply undervoltage positive going

threshold

Min.

7.6

Typ.

8.2

Max.

8.9

Units Test Conditions

V_BSUV

V_BSsupply undervoltage negative going

threshold

V_BSsupply undervoltage hysteresis

V_CCsupply undervoltage positive going

threshold

V_BSUV

6.7

—

7.2

1.0

9.1

8.1

—

V_BSUVHY

V_CCUV

8.4

9.8

V_CCsupply undervoltage negative going

threshold

V_CCUV

7.5

8.2

8.9

V_CCUVHY

I_LK

I_QBS

I_QCC

V_CCsupply undervoltage hysteresis

High-side floating well offset supply leakage

Quiescent V_BSsupply current

Quiescent V_CCsupply current

—

180

—

450

—

1.7

0.7

—

0.9

—

12.5

—

V_B= V_S= 650 V

170

600

0.05

0.02

230

290

650

700

2.1

0.9

V_IN= 0 V or 5 V

—

V_OHHigh level output voltage drop, V_cc- V_{LO ,}V_B- V_HO

V_OLLow level output voltage drop, V_O

I_o+meanMean output current from 3 V to 6 V

0.2

0.1

—

I_O= 2 mA

C_L= 22 nF

V_O= 0 V

C_L= 22 nF

V_O= 15 V

I_o+

Peak output current turn-on¹

I_o-meanMean output current from 12 V to 9 V

I_o-

V_IH

V_IL

V_SD,TH

Peak output current turn-off¹

Logic “1” input voltage

Logic “0” input voltage

/SD input threshold

—

2.4

1.1

Vcc = 10 V to 20 V

I_IN+Input bias current (Output = High)

I_IN-Input bias current (Output = Low)

IN = 5 V

IN = 0 V

V_DT/SD= 0 V

—

µA

I_SD+/SD input bias current

—

- 400

Bootstrap diode forward voltage between Vcc

and VB

V_FBSD

—

1.2

I_F= 0.3 mA

Bootstrap diode forward current between Vcc

and VB

R_BSDBootstrap diode resistance

I_FBSD

—

125

Ω

V_CC- V_B= 4 V

V_F1= 4 V,V_F2= 5 V

Vcc = 15 V

Allowable Negative VS pin voltage for IN Signal

propagation to HO

V_S

-11

-10

¹Not subjected to production test, verified by characterization.

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