2SB891F

更新时间： 2024-01-17 07:12:55

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
3页	149K
描述
Silicon PNP Power Transistors

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技术参数
数据手册

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2SB891F 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.61
Base Number Matches：	1

2SB891F 数据手册

Inchange Semiconductor

Product Specification

Silicon PNP Power Transistors

2SB891F

DESCRIPTION

·With TO-126 package

·Complement to type 2SD1189F

·Low collector saturation voltage

APPLICATIONS

·For low frequency power amplifier

applications

PINNING

DESCRIPTION

Emitter

Collector;connected to

mounting base

Base

Absolute maximum ratings(Ta=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

CONDITIONS

Open emitter

VALUE

-40

UNIT

Open base

-32

Open collector

-5

Collector current (DC)

Collector current-Peak

-2

I_CM

-3

T_a=25℃

T_C=25℃

1.2

P_C

Collector power dissipation

T_j

Junction temperature

Storage temperature

150

-55~150

℃

T_stg

12 3

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2SB891F/PR	ROHM	Power Bipolar Transistor, 2A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/	获取价格
2SB891F/Q	ROHM	2A, 32V, PNP, Si, POWER TRANSISTOR, TO-126FP, TO-126FP, 3 PIN	获取价格
2SB891F/QR	ROHM	Power Bipolar Transistor, 2A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/	获取价格
2SB891F/R	ROHM	2A, 32V, PNP, Si, POWER TRANSISTOR, TO-126FP, TO-126FP, 3 PIN	获取价格