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2SB892S PDF预览

2SB892S

更新时间: 2024-02-26 20:02:01
品牌 Logo 应用领域
JCST /
页数 文件大小 规格书
2页 120K
描述
Transistor

2SB892S 技术参数

是否Rohs认证: 符合生命周期:End Of Life
包装说明:CYLINDRICAL, O-PBCY-T3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.29.00.75Factory Lead Time:1 week
风险等级:5.3Is Samacsys:N
最大集电极电流 (IC):2 A集电极-发射极最大电压:50 V
配置:SINGLE最小直流电流增益 (hFE):140
JESD-30 代码:O-PBCY-T3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
极性/信道类型:PNP认证状态:Not Qualified
表面贴装:NO端子面层:Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)
端子形式:THROUGH-HOLE端子位置:BOTTOM
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):150 MHzBase Number Matches:1

2SB892S 数据手册

 浏览型号2SB892S的Datasheet PDF文件第2页 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD  
TO-92L Plastic-Encapsulate Transistors  
TO-92L  
2SB892  
TRANSISTOR (PNP)  
1. EMITTER  
FEATURE  
z
Power supplies, relay drivers, lamp drivers,  
and automotive wiring  
2. COLLECTOR  
3. BASE  
z
z
Low saturation voltage.  
Large current capacity and wide ASO.  
123  
MAXIMUM RATINGS (TA=25unless otherwise noted)  
Symbol  
VCBO  
Parameter  
Value  
Units  
V
-60  
-50  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current -Continuous  
Collector Dissipation  
VCEO  
VEBO  
IC  
V
-6  
V
-2  
A
PC  
0.75  
150  
-55-150  
W
TJ  
Junction Temperature  
Storage Temperature  
Tstg  
ELECTRICAL CHARACTERISTICS (Tamb=25℃  
unless otherwise specified)  
Parameter  
Symbol  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
Test  
conditions  
MIN  
-60  
-50  
-6  
MAX  
UNIT  
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
V
V
IC= -100μA , IE=0  
IC= -1mA , IB=0  
V
IE=- 100μA, IC=0  
VCB= -50V , IE=0  
VEB= -4V , IC=0  
VCE=-2V, IC= -100mA  
VCE=-2V, IC= -1.5A  
IC= -1A, IB= -50mA  
IC= -1A, IB= -50mA  
VCE= -10 V, IC= -50mA  
-0.1  
-0.1  
560  
μA  
μA  
Emitter cut-off current  
IEBO  
hFE(1)  
100  
40  
DC current gain  
hFE(2)  
Collector-emitter saturation voltage  
Base-emitter saturation voltage  
Transition frequency  
VCE(sat)  
VBE(sat)  
f T  
-0.4  
-1.2  
V
V
150  
MHz  
CLASSIFICATION OF hFE(1)  
Rank  
R
S
T
U
Range  
100-200  
140-280  
200-400  
280-560  

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