IDT29FCT2052AT/BT/CT
FASTCMOSOCTALREGISTEREDTRANSCEIVER
INDUSTRIALTEMPERATURERANGE
ABSOLUTEMAXIMUMRATINGS(1)
PINCONFIGURATION
Symbol
Description
Max
Unit
V
(2)
VTERM
Terminal Voltage with Respect to GND
–0.5 to +7
(3)
VTERM
Terminal Voltage with Respect to GND –0.5 to VCC+0.5
V
24
23
22
21
20
19
18
17
16
15
14
13
1
2
B7
B6
VCC
TSTG
IOUT
Storage Temperature
DC Output Current
–65 to +150
–60 to +120
° C
mA
A7
A6
A5
B5
3
4
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause
permanent damage to the device. This is a stress rating only and functional operation
of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliability. No terminal voltage may exceed
Vcc by +0.5V unless otherwise noted.
B4
B3
B2
A4
A3
A2
5
6
7
8
9
SO24-2
SO24-8
2. Inputs and Vcc terminals only.
3. Output and I/O terminals only.
B1
B0
A1
A0
OEB
CAPACITANCE (TA = +25°C, F = 1.0MHz)
Symbol
CIN
Parameter(1)
Input Capacitance
Output Capacitance
Conditions
VIN = 0V
Typ.
6
Max. Unit
OEA
CPB
CPA
10
11
10
12
pF
pF
CEA
GND
COUT
VOUT = 0V
8
CEB
12
NOTE:
1. This parameter is measured at characterization but not tested.
SOIC/ QSOP
TOP VIEW
REGISTERFUNCTIONTABLE(1)
(Applies to A or B Register)
Inputs
Internal
D
X
L
CP
X
↑
CE
H
L
Q
N C
L
Function
HoldData
LoadData
H
↑
L
H
NOTE:
1. H = HIGH Voltage Level
L = LOW Voltage Level
X = Don’t Care
NC = No Change
↑ = LOW-to-HIGH Transition
OUTPUTCONTROL(1)
Internal
OE
H
Q
X
L
Y-Outputs
Function
Z
L
DisableOutputs
EnableOutputs
L
L
H
H
NOTE:
1. H = HIGH Voltage Level
L = LOW Voltage Level
X = Don’t Care
Z = High-Impedance
2