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27C512A10IL PDF预览

27C512A10IL

更新时间: 2022-01-19 11:34:00
品牌 Logo 应用领域
其他 - ETC 可编程只读存储器电动程控只读存储器
页数 文件大小 规格书
12页 127K
描述
x8 EPROM

27C512A10IL 数据手册

 浏览型号27C512A10IL的Datasheet PDF文件第3页浏览型号27C512A10IL的Datasheet PDF文件第4页浏览型号27C512A10IL的Datasheet PDF文件第5页浏览型号27C512A10IL的Datasheet PDF文件第7页浏览型号27C512A10IL的Datasheet PDF文件第8页浏览型号27C512A10IL的Datasheet PDF文件第9页 
27C512A  
Since the erased state is “1” in the array, programming  
of “0” is required. The address to be programmed is set  
via pins A0 - A15 and the data to be programmed is  
presented to pins O0 - O7. When data and address are  
stable, a low going pulse on the CE line programs that  
location.  
1.3  
Standby Mode  
The standby mode is entered when the CE pin is high,  
and the program mode is not identified.  
When this conditions are met, the supply current will  
drop from 25 mA to 30 µA.  
1.7  
Verify  
1.4  
Output Enable OE/VPP  
After the array has been programmed it must be veri-  
fied to ensure all the bits have been correctly pro-  
grammed. This mode is entered when all the following  
conditions are met:  
This multifunction pin eliminates bus connection in mul-  
tiple bus microprocessor systems and the outputs go to  
high impedance when:  
• the OE/VPP pin is high (VIH).  
a) VCC is at the proper level,  
b) the OE/VPP pin is low, and  
c) the CE line is low.  
When a VH input is applied to this pin, it supplies the  
programming voltage (VPP) to the device.  
1.5  
Erase Mode (UV Windowed Versions)  
1.8  
Inhibit  
Windowed products offer the ability to erase the mem-  
ory array. The memory matrix is erased to the all “1's”  
state as a result of being exposed to ultraviolet light. To  
ensure complete erasure, a dose of 15 watt-second/  
When programming multiple devices in parallel with dif-  
ferent data, only CE needs to be under separate control  
to each device. By pulsing the CE line low on a partic-  
ular device, that device will be programmed; all other  
devices with CE held high will not be programmed with  
the data (although address and data will be available  
on their input pins).  
2
cm is required. This means that the device window  
must be placed within one inch and directly underneath  
an ultraviolet lamp with a wavelength of 2537 Ang-  
2
stroms, intensity of 12,000 mW/cm for approximately  
40 minutes.  
1.9  
Identity Mode  
1.6  
Programming Mode  
In this mode specific data is output which identifies the  
manufacturer as Microchip Technology Inc. and the  
device type. This mode is entered when Pin A9 is taken  
to VH (11.5V to 12.5V). The CE and OE/VPP lines must  
be at VIL. A0 is used to access any of the two non-eras-  
able bytes whose data appears on O0 through O7.  
The Express algorithm must be used for best results. It  
has been developed to improve programming yields  
and throughput times in a production environment. Up  
to 10 100-microsecond pulses are applied until the byte  
is verified. A flowchart of the Express algorithm is  
shown in Figure 1-3.  
Programming takes place when:  
Pin  
Identity  
Input  
A0  
Output  
a) VCC is brought to the proper voltage,  
b) OE/VPP is brought to the proper VH level, and  
c) CE line is low.  
H
e
x
0 O O O O O O O  
7
6
5
4
3
2
1
0
Manufacturer  
Device Type*  
VIL  
VIH  
0
1
0
0
1
0
0
0
1
1
0
1
0
0
1
0
29  
0D  
* Code subject to change  
DS11173F-page 6  
1998 Microchip Technology Inc.  
This Material Copyrighted by Its Respective Manufacturer  

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