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27C256-90SO PDF预览

27C256-90SO

更新时间: 2024-01-19 11:29:47
品牌 Logo 应用领域
美国微芯 - MICROCHIP 可编程只读存储器电动程控只读存储器
页数 文件大小 规格书
12页 70K
描述
256K (32K x 8) CMOS EPROM

27C256-90SO 技术参数

是否Rohs认证: 不符合生命周期:Transferred
包装说明:DIP, DIP28,.6Reach Compliance Code:unknown
风险等级:5.83Is Samacsys:N
最长访问时间:90 nsI/O 类型:COMMON
JESD-30 代码:R-PDIP-T28JESD-609代码:e0
内存密度:262144 bit内存宽度:8
端子数量:28字数:32768 words
字数代码:32000最高工作温度:70 °C
最低工作温度:组织:32KX8
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:DIP封装等效代码:DIP28,.6
封装形状:RECTANGULAR封装形式:IN-LINE
电源:5 V编程电压:12.5 V
认证状态:Not Qualified最大待机电流:0.0001 A
子类别:OTP ROMs最大压摆率:0.03 mA
标称供电电压 (Vsup):5 V表面贴装:NO
技术:CMOS温度等级:COMMERCIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:THROUGH-HOLE
端子节距:2.54 mm端子位置:DUAL
Base Number Matches:1

27C256-90SO 数据手册

 浏览型号27C256-90SO的Datasheet PDF文件第1页浏览型号27C256-90SO的Datasheet PDF文件第2页浏览型号27C256-90SO的Datasheet PDF文件第3页浏览型号27C256-90SO的Datasheet PDF文件第5页浏览型号27C256-90SO的Datasheet PDF文件第6页浏览型号27C256-90SO的Datasheet PDF文件第7页 
27C256  
TABLE 1-4:  
PROGRAMMING DC CHARACTERISTICS  
Ambient Temperature: Tamb = 25°C ± 5°C  
VCC = 6.5V ± 0.25V, VPP = VH = 13.0V ± 0.25V  
Parameter  
Status  
Symbol  
Min  
Max.  
Units  
Conditions  
Input Voltages  
Logic”1”  
Logic”0”  
VIH  
VIL  
2.0  
-0.1  
VCC+1  
0.8  
V
V
Input Leakage  
ILI  
-10  
2.4  
10  
µA  
VIN = 0V to VCC  
Output Voltages  
Logic”1”  
Logic”0”  
VOH  
VOL  
V
V
IOH = -400 µA  
IOL = 2.1 mA  
0.45  
20  
VCC Current, program & verify  
VPP Current, program  
ICC2  
IPP2  
VH  
mA  
mA  
V
Note 1  
Note 1  
25  
A9 Product Identification  
11.5  
12.5  
Note 1: VCC must be applied simultaneously or before VPP and removed simultaneously or after VPP  
TABLE 1-5:  
PROGRAMMING AC CHARACTERISTICS  
for Program, Program Verify  
and Program Inhibit Modes  
AC Testing Waveform: VIH=2.4V and VIL=0.45V; VOH=2.0V; VOL=0.8V  
Output Load: 1 TTL Load + 100pF  
Ambient Temperature: Tamb=25°C ± 5°C  
VCC= 6.5V ± 0.25V, VPP = VH = 13.0V ± 0.25V  
Parameter  
Symbol  
Min. Max. Units  
Remarks  
Address Set-Up Time  
Data Set-Up Time  
Data Hold Time  
tAS  
tDS  
2
2
µs  
µs  
µs  
µs  
ns  
µs  
µs  
µs  
µs  
µs  
ns  
tDH  
2
Address Hold Time  
Float Delay (2)  
tAH  
0
tDF  
0
130  
VCC Set-Up Time  
Program Pulse Width (1)  
CE Set-Up Time  
tVCS  
tPW  
tCES  
tOES  
tVPS  
tOE  
2
95  
2
105  
100 µs typical  
OE Set-Up Time  
2
VPP Set-Up Time  
Data Valid from OE  
2
100  
Note 1: For express algorithm, initial programming width tolerance is 100 µs ±5%.  
2: This parameter is only sampled and not 100% tested. Output float is defined as the point where data is no  
longer driven (see timing diagram).  
DS11001L-page 4  
1996 Microchip Technology Inc.  

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