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27C256-10 PDF预览

27C256-10

更新时间: 2024-01-21 10:51:47
品牌 Logo 应用领域
旺宏电子 - Macronix 可编程只读存储器电动程控只读存储器
页数 文件大小 规格书
15页 765K
描述
256K-BIT [32K x 8] CMOS EPROM

27C256-10 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete零件包装代码:SOIC
包装说明:8 X 13.40 MM, VSOP-28针数:28
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8542.32.00.71风险等级:5.62
Is Samacsys:N最长访问时间:100 ns
I/O 类型:COMMONJESD-30 代码:R-PDSO-G28
JESD-609代码:e0长度:11.8 mm
内存密度:262144 bit内存集成电路类型:OTP ROM
内存宽度:8功能数量:1
端子数量:28字数:32768 words
字数代码:32000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:32KX8输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:TSOP1
封装等效代码:TSSOP28,.53,22封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE并行/串行:PARALLEL
峰值回流温度(摄氏度):NOT SPECIFIED电源:5 V
编程电压:13 V认证状态:Not Qualified
座面最大高度:1.2 mm最大待机电流:0.0001 A
子类别:OTP ROMs最大压摆率:0.025 mA
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子节距:0.55 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:8 mm
Base Number Matches:1

27C256-10 数据手册

 浏览型号27C256-10的Datasheet PDF文件第1页浏览型号27C256-10的Datasheet PDF文件第2页浏览型号27C256-10的Datasheet PDF文件第4页浏览型号27C256-10的Datasheet PDF文件第5页浏览型号27C256-10的Datasheet PDF文件第6页浏览型号27C256-10的Datasheet PDF文件第7页 
MX27C256  
TWO-LINE OUTPUT CONTROL FUNCTION  
SYSTEM CONSIDERATIONS  
To accommodate multiple memory connections, a two-  
line control function is provided to allow for:  
During the switch between active and standby  
conditions, transient current peaks are produced on the  
rising and falling edges of Chip Enable. The magnitude  
of these transient current peaks is dependent on the  
outputcapacitanceloadingofthedevice. Ataminimum,  
a0.1uFceramiccapacitor(highfrequency,lowinherent  
inductance) should be used on each device between  
VCCandGNDtominimizetransienteffects. Inaddition,  
to overcome the voltage drop caused by the inductive  
effects of the printed circuit board traces on EPROM  
arrays, a 4.7 uF bulk electrolytic capacitor should be  
usedbetweenVccandGNDforeacheightdevices. The  
location of the capacitor should be close to where the  
power supply is connected to the array.  
1. Low memory power dissipation,  
2. Assurance that output bus contention will not  
occur.  
It is recommended that CE be decoded and used as the  
primary device-selecting function, while OE be made a  
common connection to all devices in the array and  
connectedtotheREADlinefromthesystemcontrolbus.  
This assures that all deselected memory devices are in  
their low-power standby mode and that the output pins  
are only active when data is desired from a particular  
memory device.  
MODE SELECT TABLE  
PINS  
MODE  
CE  
OE  
VIL  
VIH  
X
A0  
X
A9  
X
VPP  
VCC  
VCC  
VCC  
VCC  
VPP  
VPP  
VPP  
VCC  
VCC  
OUTPUTS  
DOUT  
High Z  
High Z  
High Z  
DIN  
Read  
VIL  
Output Disable  
Standby (TTL)  
Standby (CMOS)  
Program  
VIL  
X
X
VIH  
X
X
VCC±0.3V  
VIL  
X
X
X
VIH  
VIL  
VIH  
VIL  
VIL  
X
X
Program Verify  
Program Inhibit  
Manufacturer Code(3)  
Device Code(3)  
VIH  
X
X
DOUT  
High Z  
C2H  
VIH  
X
X
VIL  
VIL  
VIH  
VH  
VH  
VIL  
10H  
NOTES:  
1. VH = 12.0 V ±0.5 V  
2. X = Either VIH or VIL  
3. A1 - A8 = A10 - A14 = VIL (For auto select)  
4. See DC Programming characteristics for VPP voltage during programming.  
REV.5.6, AUG. 26, 2003  
P/N:PM0203  
3

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