Datasheet > 27C16A-15VS

27C16A-15VS

更新时间： 2022-11-27 08:43:43

品牌	Logo	应用领域
美国微芯 - MICROCHIP		可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数	文件大小	规格书
8页	68K
描述
16K (2K x 8) CMOS EEPROM

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27C16A-15VS 数据手册

28C16A

TABLE 1-3:

READ OPERATION AC CHARACTERISTICS

AC Testing Waveform:

Output Load:

VIH = 2.4V; VIL = 0.45V; VOH = 2.0V; Vol = 0.8V

1 TTL Load + 100pF

Input Rise and Fall Times: 20 ns

Ambient Temperature:

Commercial (C): Tamb = 0˚C to +70˚0˚C

Industrial (I):

Tamb = -40˚C to +85˚C

28C16A-15

Sym

28C16A-20

28C16A-25

Parameter

Units

Conditions

Min

Max

Min

Max

Min

Max

Address to Output Delay

CE to Output Delay

tACC

tCE

—

150

—

200

—

250

100

OE = CE = VIL

OE = VIL

OE to Output Delay

tOE

CE = VIL

CE or OE High to Output Float

tOFF

tOH

Output Hold from CE or OE,

whichever occurs ﬁrst

—

Endurance

—

cycles 25°C, Vcc =

5.0V, Block

Mode (Note)

Note: This parameter is not tested but guaranteed by characterization. For endurance estimates in a speciﬁc appli-

cation, please consult the Total Endurance Model which can be obtained on our BBS or website.

FIGURE 1-1: READ WAVEFORMS

VIH

Address

Address Valid

VIL

VIH

VIL

tCE(2)

VIH

VIL

tOFF(1,3)

tOH

tOE(2)

VOH

High Z

Data

Valid Output

VOL

VIH

VIL

tACC

Notes: (1) tOFF is specified for OE or CE, whichever occurs first

(2) OE may be delayed up to tCE - tOE after the falling edge of CE without impact on tCE

(3) This parameter is sampled and is not 100% tested

1996 Microchip Technology Inc.

DS11125G-page 3

1 234 5 6 7 8

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