Datasheet > 26N50

26N50

更新时间： 2022-02-26 12:29:26

品牌	Logo	应用领域
友顺 - UTC		/
页数	文件大小	规格书
6页	187K
描述
26A, 500V N-CHANNEL POWER MOSFET

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26N50 数据手册

26N50

Preliminary

Power MOSFET

ELECTRICAL CHARACTERISTICS(Cont.)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

SWITCHING PARAMETERS

Total Gate Charge

Gate to Source Charge

Gate to Drain Charge

Turn-ON Delay Time

Rise Time

Q_G

Q_GS

Q_GD

t_D(ON)

t_R

120

V_GS=10V, V_DS=400V, I_D=26A

(Note 1, 2)

170

250 500

200 400

155 320

V_DD=250V, I_D=26A, R_G=25ꢀ

(Note 1, 2)

Turn-OFF Delay Time

Fall-Time

t_D(OFF)

t_F

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Maximum Body-Diode Continuous Current

Maximum Body-Diode Pulsed Current

Drain-Source Diode Forward Voltage

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

I_S

I_SM

V_SD

t_rr

I_S=26A, V_GS=0V

1.4

250

µC

I_S=26A, V_GS=0V,

dI_F/dt=100A/µs (Note 1)

Q_RR

1.1

Note: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%

2. Essentially independent of operating temperature

UNISONIC TECHNOLOGIES CO., LTD

3 of 6

QW-R502-789.a

www.unisonic.com.tw

1 234 5 6

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