Datasheet > 26NM60N

26NM60N

更新时间： 2024-11-24 12:50:15

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		栅极
页数	文件大小	规格书
14页	697K
描述
N-channel 600 V, 0.160 Î©, 19 A PowerFLATâ¢ 8x8 HV ultra low gate charge MDmeshâ¢ II Power MOSFET

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26NM60N 数据手册

STL26NM60N

N-channel 600 V, 0.160 Ω, 19 A PowerFLAT™ 8x8 HV

ultra low gate charge MDmesh™ II Power MOSFET

Features

V_DSS

T_Jmax

R_DS(on)

max

Order code

I_D

"OTTOM VIEW

3ꢀꢁꢂ

< 0.185 Ω 19 A ⁽¹⁾

'ꢀꢃꢂ

STL26NM60N

650 V

$ꢀꢄꢂ

1. The value is rated according to R_thj-case

■ 100% avalanche tested

■ Low input capacitance and gate charge

■ Low gate input resistance

0OWER&,!4 ꢅXꢅ (6

Applications

■ Switching applications

Figure 1.

Internal schematic diagram

Description

This device is an N-channel MDmesh™ V Power

MOSFET based on an innovative proprietary

vertical process technology, which is combined

with STMicroelectronics’ well-known

$ꢀꢄꢂ

PowerMESH™ horizontal layout structure. The

resulting product has extremely low on-

resistance, which is unmatched among silicon-

based Power MOSFETs, making it especially

suitable for applications which require superior

power density and outstanding efficiency.

'ꢀꢃꢂ

3ꢀꢁꢂ

!-ꢆꢃꢇꢈꢉVꢃ

Table 1.

Order code

STL26NM60N

Device summary

Marking

Package

Packaging

Tape and reel

26NM60N

PowerFLAT™ 8x8 HV

November 2011

Doc ID 18472 Rev 2

1/14

www.st.com

12 3 4 5 6 7...14

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