MB Series
Single Phase Bridge
(Power Modules), 25/35 A
Vishay High Power Products
FORWARD CONDUCTION
PARAMETER
SYMBOL
TEST CONDITIONS
Resistive or inductive load
Capacitive load
26MB-A
25
36MB-A
35
UNITS
A
Maximum DC output current
at case temperature
IO
20
28
65
60
°C
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
400
420
335
350
790
725
560
512
5.6
475
500
400
420
1130
1030
800
730
11.3
0.79
0.96
5.8
No voltage
reapplied
Maximum peak, one-cycle
non-repetitive forward current
IFSM
A
100 % VRRM
reapplied
Initial TJ =
TJ maximum
No voltage
reapplied
Maximum I2t for fusing
I2t
A2s
100 % VRRM
reapplied
Maximum I2√t for fusing
I2√t
I2t for time tx = I2√t × √tx; 0.1 ≤ tx ≤ 10 ms, VRRM = 0 V
(16.7 % x π x IF(AV) < I < π x IF(AV)), TJ maximum
(I > π x IF(AV)), TJ maximum
kA2√s
Low level value of threshold voltage
VF(TO)1
0.76
0.92
6.8
V
High level value of threshold voltage VF(TO)2
Low level forward slope resistance
High level forward slope resistance
rt1
rt2
(16.7 % x π x IF(AV) < I < π x IF(AV)), TJ maximum
(I > π x IF(AV)), TJ maximum
mΩ
5.0
4.5
TJ = 25 °C, IFM = 40 Apk (26MB)
tp = 400 µs
Maximum forward voltage drop
VFM
1.11
1.14
V
TJ = 25 °C, IFM = 55 Apk (36MB)
Maximum DC reverse current
IRRM
VINS
TJ = 25 °C, per diode at VRRM
f = 50 Hz, t = 1 s
10
µA
V
RMS isolation voltage base plate
2700
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
26MB-A
36MB-A
UNITS
Junction and storage
temperature range
TJ, TStg
- 55 to 150
°C
Maximum thermal resistance
junction to case per bridge
RthJC
1.7
1.2
K/W
Maximum thermal resistance,
case to heatsink
RthCS
Mounting surface, smooth, flat and greased
Bridge to heatsink
0.2
Approximate weight
20
g
Mounting torque 10 %
2.0
Nm
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For technical questions, contact: ind-modules@vishay.com
Document Number: 93563
Revision: 27-Jun-08