Datasheet > 256M4

256M4

更新时间： 2024-02-28 00:46:58

品牌	Logo	应用领域
MDTIC		动态存储器双倍数据速率
页数	文件大小	规格书
181页	8341K
描述
1Gb: x4, x8, x16 DDR3 SDRAM

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中文翻译

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数据手册

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256M4 数据手册

1Gb : x4, x8, x16 DDR3 SDRAM

Fe a t u re s

DDR3 SDRAM

MT41J256M4 – 32 Me g x 4 x 8 Ba n ks

MT41J128M8 – 16 Me g x 8 x 8 Ba n ks

MT41J64M16 – 8 Me g x 16 x 8 Ba n ks

Op t io n s

Ma rkin g

Fe a t u re s

• VDD = VDDQ = +1.5V ±0.075V

• Configuration

– 256 Meg x 4

– 128 Meg x 8

– 64 Meg x 16

• 1.5V center-terminated push/ pull I/ O

• Differential bidirectional data strobe

• 8n-bit prefetch architecture

256M4

128M8

64M16

• Differential clock inputs (CK, CK#)

• 8 internal banks

• Nominal and dynamic on-die termination (ODT) for

data, strobe, and mask signals

• CAS (READ) latency (CL): 5, 6, 7, 8, 9, 10, or 11

• POSTED CAS ADDITIVE latency (AL): 0, CL - 1, CL - 2

• CAS (WRITE) latency (CWL): 5, 6, 7, 8, based on CK

• FBGA package (Pb-free) - x4, x8

– 78-ball FBGA (8mm x 11.5mm) Rev. F

– 78-ball FBGA (9mm x 11.5mm) Rev. D

– 86-ball FBGA (9mm x 15.5mm) Rev. B

• FBGA package (Pb-free) - x16

– 96-ball FBGA (9mm x 15.5mm) Rev. B

• Timing - cycle time

• Fixed burst length (BL) of 8 and burst chop (BC) of 4

(via the mode register set [MRS])

– 1.25ns @ CL = 11 (DDR3-1600)

– 1.25ns @ CL = 10 (DDR3-1600)

– 1.25ns @ CL = 9 (DDR3-1600)

– 1.5ns @ CL = 10 (DDR3-1333)

– 1.5ns @ CL = 9 (DDR3-1333)

– 1.5ns @ CL = 8 (DDR3-1333)

– 1.87ns @ CL = 8 (DDR3-1066)

– 1.87ns @ CL = 7 (DDR3-1066)

– 2.5ns @ CL = 6 (DDR3-800)

– 2.5ns @ CL = 5 (DDR3-800)

• Revision

-125

-125E

-125F

-15

-15E

-15F

-187

-187E

-25

-25E

:B/ :D/ :F

• Selectable BC4 or BL8 on-the-fly (OTF)

• Self refresh mode

• T of 0 C to 95 C

– 64ms, 8,192 cycle refresh at 0 C to 85 C

– 32ms at 85 C to 95 C

• Clock frequency range of 300–800 MHz

• Self refresh temperature (SRT)

• Autom atic self refresh (ASR)

• Write leveling

• Multipurpose register

• Output driver calibration

Ta b le 1:

Ke y Tim in g Pa ra m e t e rs

Sp e e d Gra d e

-125

Da t a Ra t e (MT/s)

Ta rg e t ^tRCD-^tRP-CL

^tRCD (n s)

^tRP (n s)

CL (n s)

1600

1333

1066

800

11-11-11

10-10-10

9-9-9

13.75

12.5

11.25

13.75

12.5

11.25

13.75

12.5

11.25

-125E

-125F

-15

10-10-10

9-9-9

-15E

-15F

-187

-187E

-25

13.5

8-8-8

7-7-7

13.1

6-6-6

-25E

800

5-5-5

12.5

PDF: 09005aef826aa906/Source: 09005aef82a357c3

1Gb_DDR3_D1 .fm - Rev. D 8/1/08 EN

Micron Technology, Inc., reserves the right to change products or specifications without notice.

Products and specifications discussed herein are subject to change by Micron without notice.

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与256M4相关器件

型号	品牌	获取价格	描述	数据表
256MABA04KJ	ILLINOISCAPACITOR	获取价格	AC/Motor Run Film Capacitors
256MARA02KR	ILLINOISCAPACITOR	获取价格	Axial Leaded Metallized Polypropylene Film
256MARA02KR	CDE	获取价格	3.8 mΩ
256MARA02KS	ILLINOISCAPACITOR	获取价格	Axial Leaded Metallized Polypropylene Film
256MARA02KS	CDE	获取价格	4.2 mΩ
256MARA03KR	ILLINOISCAPACITOR	获取价格	Axial Leaded Metallized Polypropylene Film
256MARA03KR	CDE	获取价格	4.5 mΩ
256MARA03KS	ILLINOISCAPACITOR	获取价格	Axial Leaded Metallized Polypropylene Film
256MARA03KS	CDE	获取价格	5 mΩ
256MARA04KN	ILLINOISCAPACITOR	获取价格	Axial Leaded Metallized Polypropylene Film

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