Datasheet > 存储 > EEPROM> 24LC1025T-E/SM

24LC1025T-E/SM

更新时间： 2024-01-11 13:29:45

品牌	Logo	应用领域
美国微芯 - MICROCHIP		可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数	文件大小	规格书
22页	351K
描述
1024K I2C⑩ CMOS Serial EEPROM

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24LC1025T-E/SM 数据手册

24AA1025/24LC1025/24FC1025

Industrial (I): VCC = +1.7V to 5.5V TA = -40°C to +85°C

Automotive (E): VCC = +2.5V to 5.5V TA = -40°C to +125°C

AC CHARACTERISTICS (Continued)

Param.

Sym.

Characteristic

Min.

Max.

Units

Conditions

No.

TWC

Write cycle time (byte or page)

Endurance

—

3 ms, typical

1 M

—

cycles 25°C (Note 4)

Note 1: Not 100% tested. CB = total capacitance of one bus line in pF.

2: As a transmitter, the device must provide an internal minimum delay time to bridge the undefined region (minimum

300 ns) of the falling edge of SCL to avoid unintended generation of Start or Stop conditions.

3: The combined TSP and VHYS specifications are due to new Schmitt Trigger inputs which provide improved noise spike

suppression. This eliminates the need for a TI specification for standard operation.

4: This parameter is not tested but established by characterization. For endurance estimates in a specific application,

please consult the Total Endurance™ Model which can be obtained from Microchip’s web site at www.microchip.com.

5: Max. clock frequency is 100 kHz for E-temp devices <4.5V. 1.7-2.5V (100 kHz) timings must be used.

FIGURE 1-1:

BUS TIMING DATA

SCL

SDA

OUT

(protected)

(unprotected)

DS21941E-page 4

Preliminary

1 2 345 6 7...22

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