5秒后页面跳转
24C16B-I/P PDF预览

24C16B-I/P

更新时间: 2024-02-18 00:47:59
品牌 Logo 应用领域
美国微芯 - MICROCHIP 可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟光电二极管内存集成电路
页数 文件大小 规格书
13页 118K
描述
2K X 8 I2C/2-WIRE SERIAL EEPROM, PDIP8, 0.300 INCH, PLASTIC, DIP-8

24C16B-I/P 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete零件包装代码:DIP
包装说明:0.300 INCH, PLASTIC, DIP-8针数:8
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8542.32.00.51风险等级:5.89
Is Samacsys:N其他特性:2-WIRE SERIAL INTERFACE; DATA RETENTION > 200 YEARS; 1000000 ERASE/WRITE CYCLES GUARANTEED
最大时钟频率 (fCLK):0.1 MHz数据保留时间-最小值:200
耐久性:1000000 Write/Erase CyclesI2C控制字节:1010MMMR
JESD-30 代码:R-PDIP-T8JESD-609代码:e0
长度:9.46 mm内存密度:16384 bit
内存集成电路类型:EEPROM内存宽度:8
功能数量:1端子数量:8
字数:2048 words字数代码:2000
工作模式:SYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:2KX8
封装主体材料:PLASTIC/EPOXY封装代码:DIP
封装等效代码:DIP8,.3封装形状:RECTANGULAR
封装形式:IN-LINE并行/串行:SERIAL
峰值回流温度(摄氏度):NOT SPECIFIED电源:5 V
认证状态:Not Qualified座面最大高度:4.32 mm
串行总线类型:I2C最大待机电流:0.0001 A
子类别:EEPROMs最大压摆率:0.003 mA
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:NO
技术:CMOS温度等级:INDUSTRIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:THROUGH-HOLE
端子节距:2.54 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:7.62 mm
最长写入周期时间 (tWC):10 ms写保护:HARDWARE
Base Number Matches:1

24C16B-I/P 数据手册

 浏览型号24C16B-I/P的Datasheet PDF文件第2页浏览型号24C16B-I/P的Datasheet PDF文件第3页浏览型号24C16B-I/P的Datasheet PDF文件第4页浏览型号24C16B-I/P的Datasheet PDF文件第5页浏览型号24C16B-I/P的Datasheet PDF文件第6页浏览型号24C16B-I/P的Datasheet PDF文件第7页 
24C08B/16B  
2 ™  
8K/16K 5.0V I C Serial EEPROMs  
FEATURES  
PACKAGE TYPES  
PDIP  
• Single supply with operation from 4.5-5.5V  
• Low power CMOS technology  
A0  
A1  
1
2
8
7
VCC  
WP  
- 1 mA active current typical  
- 10 µA standby current typical at 5.5V  
• Organized as 4 or 8 blocks of 256 bytes  
(4 x 256 x 8) or (8 x 256 x 8)  
A2  
3
4
6
5
SCL  
SDA  
2
• 2-wire serial interface bus, I C compatible  
VSS  
• Schmitt trigger, filtered inputs for noise suppres-  
sion  
• Output slope control to eliminate ground bounce  
• 100 kHz compatibility  
• Self-timed write cycle (including auto-erase)  
• Page-write buffer for up to 16 bytes  
• 2 ms typical write cycle time for page-write  
• Hardware write protect for entire memory  
• Can be operated as a serial ROM  
• ESD protection > 4,000V  
• 1,000,000 ERASE/WRITE cycles guaranteed  
• Data retention > 200 years  
• 8-pin DIP, 8-lead or 14-lead SOIC packages  
• Available for extended temperature range  
8-lead  
SOIC  
1
2
8
A0  
A1  
VCC  
7
6
5
WP  
3
4
A2  
SCL  
SDA  
VSS  
14-lead  
SOIC  
- Commercial (C):  
- Industrial (I):  
- Automotive (E):  
0°C to +70°C  
-40°C to +85°C  
-40˚C to +125˚C  
14  
13  
12  
11  
1
2
3
4
5
6
7
NC  
NC  
A0  
VCC  
WP  
NC  
A1  
DESCRIPTION  
NC  
The Microchip Technology Inc. 24C08B/16B is an 8K or  
16K bit Electrically Erasable PROM intended for use in  
extended/automotive temperature ranges. The device  
is organized as four or eight blocks of 256 x 8-bit mem-  
ory with a 2-wire serial interface.The 24C08B/16B also  
has a page-write capability for up to 16 bytes of data.  
The 24C08B/16B is available in the standard 8-pin DIP  
and both 8-lead and 14-lead surface mount SOIC pack-  
ages.  
10  
9
SCL  
SDA  
NC  
A2  
VSS  
NC  
8
BLOCK DIAGRAM  
WP  
HV GENERATOR  
I/O  
CONTROL  
LOGIC  
MEMORY  
CONTROL  
LOGIC  
EEPROM  
ARRAY  
XDEC  
PAGE LATCHES  
SDA  
SCL  
YDEC  
VCC  
VSS  
SENSE AMP  
R/W CONTROL  
I2C is a trademark of Philips Corporation.  
1999 Microchip Technology Inc.  
DS21081F-page 1  

与24C16B-I/P相关器件

型号 品牌 描述 获取价格 数据表
24C16B-I/SL MICROCHIP 2K X 8 I2C/2-WIRE SERIAL EEPROM, PDSO14, 0.150 INCH, PLASTIC, SOIC-14

获取价格

24C16B-I/SN MICROCHIP 2K X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8, 0.150 INCH, PLASTIC, SOIC-8

获取价格

24C16BT-/SL ETC I2C Serial EEPROM

获取价格

24C16BT-/SN ETC I2C Serial EEPROM

获取价格

24C16BTE/SL MICROCHIP 2K X 8 I2C/2-WIRE SERIAL EEPROM, PDSO14, 0.150 INCH, PLASTIC, SOIC-14

获取价格

24C16BT-E/SL ETC I2C Serial EEPROM

获取价格