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24AA256TE/SN PDF预览

24AA256TE/SN

更新时间: 2024-01-05 13:19:46
品牌 Logo 应用领域
美国微芯 - MICROCHIP 可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数 文件大小 规格书
34页 679K
描述
256K I2C CMOS Serial EEPROM

24AA256TE/SN 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:TSSOP-8Reach Compliance Code:compliant
Factory Lead Time:6 weeks风险等级:1.27
最大时钟频率 (fCLK):0.4 MHzJESD-30 代码:R-PDSO-G8
JESD-609代码:e3长度:4.4 mm
内存密度:262144 bit内存集成电路类型:EEPROM
内存宽度:8湿度敏感等级:1
功能数量:1端子数量:8
字数:32768 words字数代码:32000
工作模式:SYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:32KX8
封装主体材料:PLASTIC/EPOXY封装代码:TSSOP
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
并行/串行:SERIAL峰值回流温度(摄氏度):260
筛选级别:TS 16949座面最大高度:1.2 mm
串行总线类型:I2C最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):1.7 V标称供电电压 (Vsup):2.5 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:Matte Tin (Sn) - annealed
端子形式:GULL WING端子节距:0.65 mm
端子位置:DUAL处于峰值回流温度下的最长时间:40
宽度:3 mm最长写入周期时间 (tWC):5 ms

24AA256TE/SN 数据手册

 浏览型号24AA256TE/SN的Datasheet PDF文件第1页浏览型号24AA256TE/SN的Datasheet PDF文件第2页浏览型号24AA256TE/SN的Datasheet PDF文件第4页浏览型号24AA256TE/SN的Datasheet PDF文件第5页浏览型号24AA256TE/SN的Datasheet PDF文件第6页浏览型号24AA256TE/SN的Datasheet PDF文件第7页 
24AA256/24LC256/24FC256  
TABLE 1-2:  
AC CHARACTERISTICS  
Electrical Characteristics:  
AC CHARACTERISTICS  
Industrial (I):  
Automotive (E): VCC = +2.5V to 5.5V  
VCC = +1.7V to 5.5V  
TA = -40°C to +85°C  
TA = -40°C to +125°C  
Param.  
Sym.  
No.  
Characteristic  
Clock frequency  
Min.  
Max.  
Units  
Conditions  
1
2
3
4
FCLK  
100  
400  
400  
kHz 1.7V VCC 2.5V  
2.5V VCC 5.5V  
1.7V VCC 2.5V 24FC256  
2.5V VCC 5.5V 24FC256  
1000  
THIGH  
TLOW  
Clock high time  
Clock low time  
4000  
600  
600  
500  
ns  
ns  
ns  
1.7V VCC 2.5V  
2.5V VCC 5.5V  
1.7V VCC 2.5V 24FC256  
2.5V VCC 5.5V 24FC256  
4700  
1300  
1300  
500  
1.7V VCC 2.5V  
2.5V VCC 5.5V  
1.7V VCC 2.5V 24FC256  
2.5V VCC 5.5V 24FC256  
TR  
TF  
SDA and SCL rise time  
(Note 1)  
1000  
300  
300  
1.7V VCC 2.5V  
2.5V VCC 5.5V  
1.7V VCC 5.5V 24FC256  
5
6
SDA and SCL fall time  
(Note 1)  
300  
100  
ns  
ns  
All except, 24FC256  
1.7V VCC 5.5V 24FC256  
THD:STA Start condition hold time  
4000  
600  
600  
250  
1.7V VCC 2.5V  
2.5V VCC 5.5V  
1.7V VCC 2.5V 24FC256  
2.5V VCC 5.5V 24FC256  
7
TSU:STA Start condition setup time  
4700  
600  
600  
250  
ns  
1.7V VCC 2.5V  
2.5V VCC 5.5V  
1.7V VCC 2.5V 24FC256  
2.5V VCC 5.5V 24FC256  
8
9
THD:DAT Data input hold time  
TSU:DAT Data input setup time  
0
ns  
ns  
(Note 2)  
250  
100  
100  
1.7V VCC 2.5V  
2.5V VCC 5.5V  
1.7V VCC 5.5V 24FC256  
10  
TSU:STO Stop condition setup time  
4000  
600  
600  
250  
ns  
1.7V VCC 2.5V  
2.5V VCC 5.5V  
1.7V VCC 2.5V 24FC256  
2.5V VCC 5.5V 24FC256  
11  
12  
TSU:WP WP setup time  
THD:WP WP hold time  
4000  
600  
600  
ns  
ns  
1.7V VCC 2.5V  
2.5V VCC 5.5V  
1.7V VCC 5.5V 24FC256  
4700  
1300  
1300  
1.7V VCC 2.5V  
2.5V VCC 5.5V  
1.7V VCC 5.5V 24FC256  
Note 1: Not 100% tested. CB = total capacitance of one bus line in pF.  
2: As a transmitter, the device must provide an internal minimum delay time to bridge the undefined region  
(minimum 300 ns) of the falling edge of SCL to avoid unintended generation of Start or Stop conditions.  
3: The combined TSP and VHYS specifications are due to new Schmitt Trigger inputs, which provide improved  
noise spike suppression. This eliminates the need for a TI specification for standard operation.  
4: This parameter is not tested but ensured by characterization. For endurance estimates in a specific  
application, please consult the Total Endurance™ Model, which can be obtained from Microchip’s web site  
at www.microchip.com.  
2010 Microchip Technology Inc.  
DS21203Q-page 3  

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