3.3
3.4
Absolute Maximum Ratings.
a. Supply Voltage Range (VCC):
-0.5Vdc to +7.0Vdc (+5V CMOS)
-0.5Vdc to +5.0Vdc (+3.3V CMOS)
Contact factory for sinewave output
-65°C to +125°C
+150C
+300°C
b. Storage Temperature Range (TSTG):
c. Junction Temperature (TJ):
d. Lead Temperature (soldering, 10 seconds):
Design, Parts, Materials and Processes, Assembly, Inspection and Test.
3.4.1 Design. The ruggedized designs implemented for these devices are proven in military and
space applications under extreme environments. All designs utilize a 4-point crystal mount.
For radiation characteristics, see paragraph 4.1.3. For all Class S and Class B products,
components meet the Element Evaluation requirements of MIL-PRF-55310, Appendix B. If
Design Pedigree Code “E” is chosen, Enhanced Element Evaluation per Appendix A herein
will be performed.
3.4.1.1 Design and Configuration Stability. Barring changes to improve performance by reselecting
passive chip component values to offset component tolerances, there will not be fundamental
changes to the design or assembly or parts, materials and processes after first product delivery
of that item without written approval from the procuring activity.
3.4.1.2 Environmental Integrity. Designs have passed the environmental qualification levels of MIL-
PRF-55310. These designs have also passed extended dynamic levels of at least:
a. Sine Vibration: MIL-STD-202, Method 204, Condition G (30g pk.)
b. Random Vibration: MIL-STD-202, Method 214, Condition II-J (43.92g rms, three
minute duration in each of three mutually perpendicular directions)
c. Mechanical Shock: MIL-STD-202, Method 213, Condition F (1500g, 0.5ms)
3.4.2 Prohibited Parts, Materials and Processes. The items listed are prohibited for use in high
reliability devices produced to this specification.
a. Gold metallization of package elements without a barrier metal.
b. Zinc chromate as a finish.
c. Cadmium, zinc, or pure tin external or internal to the device.
d. Plastic encapsulated semiconductor devices.
e. Ultrasonically cleaned electronic parts.
f. Heterojunction Bipolar Transistor (HBT) technology.
3.4.3 Assembly. Manufacturing utilizes standardized procedures, processes and verification
methods to produce MIL-PRF-55310 Class S / MIL-PRF-38534 Class K equivalent devices.
MIL-PRF-38534 Group B Option 1 in-line inspection is included on levels E and R per
paragraph 7.1 to further verify lot pedigree. Traceability of all components and production lots
are in accordance with MIL-PRF-38534, as a minimum. Tabulated records are provided as a
part of the deliverable data package. Devices are handled in accordance with Vectron
document QSP-91502 (Procedure for Electrostatic Discharge Precautions).
CODE IDENT NO.
UNSPECIFIED TOLERANCES
SIZE
DWG NO.
REV.
SHEET
F
A
00136
N/A
DOC200103
3
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