20DL2CZ51A,20FL2CZ51A
TOSHIBA HIGH EFFICIENCY DIODE STACK (HED) SILICON EPITAXIAL TYPE
20DL2CZ51A, 20FL2CZ51A
Unit: mm
SWITCHING MODE POWER SUPPLY APPLICATIONS
CONVERTER & CHOPPER APPLICATION
z Repetitive Peak Reverse Voltage
: V
= 200 V, 300 V
RRM
z Average Output Rectified Current : I = 20 A
O
z Ultra Fast Reverse-Recovery Time : t = 35 ns (Max)
rr
z Low Switching Losses and Output Noise
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC
SYMBOL
RATING
UNIT
V
20DL2CZ51A
20FL2CZ51A
200
300
20
Repetitive Peak
Reverse Voltage
V
RRM
Average Output Rectified Current
I
A
A
O
100 (50H )
z
Peak One Cycle Surge Forward
Current (Sine Wave)
I
FSM
110 (60H )
z
JEDEC
―
―
Junction Temperature
T
−40~150
−40~150
°C
°C
j
JEITA
Storage Temperature Range
T
stg
TOSHIBA
Weight: 5.9g
2−16E1A
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN
TYP.
MAX
UNIT
V
20DL2CZ51A
20FL2CZ51A
―
―
―
―
―
―
―
―
―
―
―
―
0.98
1.3
50
Peak Forward
Voltage
V
I
= 10A
FM
FM
Repetitive Peak ReverseCurrent
Reverse Recovery Time
Forward Recovery Time
Thermal Resistance
I
V
= Rated
RRM
μA
ns
RRM
t
rr
I
I
= 2A, di / dt = − 50A / μs
35
F
F
t
fr
= 1A
100
2.0
ns
R
th (j−c)
Total DC, Junction to Case
°C / W
V
, I
, t , t : A value applied to one cell.
FM RRM rr fr
POLARITY
1
2006-11-08