Datasheet > 1SV228-5TPHR6

1SV228-5TPHR6

更新时间： 2024-01-07 04:07:55

品牌	Logo	应用领域
东芝 - TOSHIBA		测试光电二极管
页数	文件大小	规格书
4页	149K
描述
DIODE 15 V, SILICON, VARIABLE CAPACITANCE DIODE, Variable Capacitance Diode

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技术参数
数据手册

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1SV228-5TPHR6 技术参数

是否无铅：	含铅	是否Rohs认证：	不符合
生命周期：	Active	包装说明：	R-PDSO-G3
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8541.10.00.80	风险等级：	5.61
其他特性：	3% MATCHED SETS ARE AVAILABLE	最小击穿电压：	15 V
配置：	COMMON CATHODE, 2 ELEMENTS	最小二极管电容比：	2.1
二极管元件材料：	SILICON	二极管类型：	VARIABLE CAPACITANCE DIODE
JESD-30 代码：	R-PDSO-G3	元件数量：	2
端子数量：	3	最高工作温度：	125 °C
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	峰值回流温度（摄氏度）：	240
认证状态：	Not Qualified	最大反向电流：	0.01 µA
反向测试电压：	15 V	表面贴装：	YES
端子形式：	GULL WING	端子位置：	DUAL
处于峰值回流温度下的最长时间：	NOT SPECIFIED	Base Number Matches：	1

1SV228-5TPHR6 数据手册

1SV228

TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type

1SV228

Electronic Tuning Applications of FM Receivers

Unit: mm

•

Low r : r = 0.3 Ω (typ.)

s s

Small package

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Reverse voltage

Symbol

Rating

Unit

125

Junction temperature

Storage temperature

°C

stg

−55~125

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

JEDEC

JEITA

―

Please design the appropriate reliability upon reviewing the

Toshiba Semiconductor Reliability Handbook (“Handling

Precautions”/“Derating Concept and Methods”) and individual

reliability data (i.e. reliability test report and estimated failure rate,

etc).

SC-59

TOSHIBA

1-3G1F

Weight: 0.013 g (typ.)

Electrical Characteristics (Ta = 25°C)

Characteristics

Reverse voltage

Symbol

Test Condition

Min

Typ.

Max

Unit

= 10 μA

⎯

Reverse current

Capacitance

= 15 V

⎯

= 3 V, f = 1 MHz

= 8 V, f = 1 MHz

(Note 1) 28.5

(Note 1) 11.7

30.5

12.7

⎯

32.5

13.7

2.6

3 V

8 V

Capacitance

Capacitance ratio

Series resistance

3 V 8 V

⎯

(Note 1)

2.1

= 3 V, f = 100 MHz

⎯

0.3

0.5

Note 1: Characteristics between anode 1 and anode 2

Marking

2007-11-01

12 3 4

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