Datasheet > 1SS86

1SS86

更新时间： 2023-12-06 20:06:28

品牌	Logo	应用领域
森美特 - SUNMATE		/
页数	文件大小	规格书
2页	459K
描述
Switching Diodes Switch detector

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中文翻译

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1SS86 数据手册

1SS86

SILICON EPITAXIAL PLANAR DIODES

DO-35(GLASS)

Features

Low capacitance. (C = 0.85 pF max)

High reliability with glass seal.

1.0 2(26.0)

MIN.

0.079(2.0)

MAX

Mechanical Data

0.165 (4.2)

MAX

Case: DO-35, glass case

Polarity: Color band denotes cathode

Weight: 0.004 ounces, 0.13 grams

1.0 2(26.0)

MIN.

0.020(0.52)

TYP

Dimensions in millimeters

@ T_A= 25°C unless otherwise specified

Maximum Ratings and Electrical Characteristics

Characteristic

Symbol

Value

Unit

Reverse voltage

V_R

I_O

Average rectified current

Power dissipation

°C

150

Junction temperature

Storage temperature

100

Tstg

−55 to +100

°C

Characteristic

Symbol

Min

Typ

—

Max

—

Unit

µA

Test Condition

Forward current

Reverse current

Reverse voltage

Capacitance

I_F

V_F= 0.5 V

V_R= 0.5 V

I_R= 1 mA

I_R

—

V_R

3.0

—

0.85

—

V_R= 0.5 V, f = 1 MHz

ESD-Capability *

—

C = 200 pF, R = 0 Ω, Both forward and

reverse direction 1 pulse.

Note: Failure criterion ; I_R> 50 µA at V_R= 0.5 V

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1SS86RH	HITACHI	获取价格	暂无描述
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