Datasheet > 1SS88

1SS88

更新时间： 2023-12-06 20:08:22

品牌	Logo	应用领域
森美特 - SUNMATE		/
页数	文件大小	规格书
2页	292K
描述
Switching Diodes Switch detector

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1SS88 数据手册

1SS88

SILICON EPITAXIAL PLANAR DIODES

DO-35(GLASS)

Features

Low capacitance. (C = 0.97 pF max)

High reliability with glass seal.

1.0 2(26.0)

MIN.

0.079(2.0)

MAX

Mechanical Data

0.165 (4.2)

MAX

Case: DO-35, glass case

Polarity: Color band denotes cathode

Weight: 0.004 ounces, 0.13 grams

1.0 2(26.0)

MIN.

0.020(0.52)

TYP

Dimensions in millimeters

@ T_A= 25°C unless otherwise specified

Maximum Ratings and Electrical Characteristics

Characteristic

Symbol

Value

Unit

Reverse voltage

V_R

I_FM

I_O

Peak forward current

Average rectified current

Power dissipation

Junction temperature

Storage temperature

°C

150

100

Tstg

−55 to +100

°C

Characteristic

Symbol

V_F1

V_F2

I_R1

Min

Typ

—

Max

430

600

0.2

Unit

Test Condition

Forward voltage

365

520

—

I_F= 1 mA

I_F= 10 mA

V_R= 2 V

Reverse current

µA

I_R2

—

V_R= 10 V

Capacitance

Capacitance deviation ^*3

Forward voltage deviation ^*3∆V_F1

—

0.97

0.1

V_R= 0 V, f = 1 MHz

I_F= 2.5 mA

∆C

—

∆V_F2

—

I_F= 10 mA

ESD-Capability ^*1

—

C = 200 pF, R = 0 Ω , Both forward

and reverse direction 1 pulse.

Notes: 1. Failure criterion ; I_R≥ 50 µA at V_R= 10 V

2. Each group shall unify a multiple of 4 diodes.

3. Not applied to taping-type products.

1 of 2

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