Datasheet > 1SS293_07

1SS293_07

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
东芝 - TOSHIBA		开关
页数	文件大小	规格书
3页	176K
描述
Low Voltage High Speed Switching

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1SS293_07 数据手册

1SS293

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type

1SS293

Unit: mm

Low Voltage High Speed Switching

z Low forward voltage

z Low reverse surrent

z Small package

: V

= 0.54V (typ.)

F (3)

: I = 5μA (max)

Absolute Maximum Ratings (Ta = 25°C)

Characteristic

Symbol

Rating

Unit

Maximum (peak) reverse voltage

Reverse voltage

Maximum (peak) forward current

Average forward current

Power dissipation

300

°C

100

300

Junction temperature

125

Storage temperature range

stg

−55~125

°C

JEDEC

―

EIAJ

SC−61

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

TOSHIBA

Weight: 0.13g

1−4E2D

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are

within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Electrical Characteristics (Ta = 25°C)

Test

Circuit

Characteristic

Symbol

Test Condition

= 1mA

Min

Typ.

Max

Unit

―

0.28

0.36

0.54

―

F (1)

F (2)

F (3)

Forward voltage

―

= 10mA

―

= 100mA

0.60

Reverse current

―

= 40V

μA

Total capacitance

―

= 0, f = 1MHz

2007-11-01

12 3

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