Datasheet > 1SMB5917B

1SMB5917B

更新时间： 2024-01-29 05:28:31

品牌	Logo	应用领域
EIC		稳压二极管测试光电二极管
页数	文件大小	规格书
3页	103K
描述
SILICON ZENER DIODES

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中文翻译

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数据手册

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1SMB5917B 数据手册

TH97/2478

TH09/2479

IATF 0060636

SGS TH07/1033

SILICON ZENER DIODES

1SMB5913B - 1SMB5956B

SMB (DO-214AA)

VZ : 3.3 - 200 Volts

P^D: 3.0 Watts

1.1

± 0.3

FEATURES :

* Complete Voltage Range 3.3 to 200 Volts

* High peak reverse power dissipation

* Flat handling surface for accurate placement

* Low leakage current

–

0.2

0.22

± 0.07

2.0

0.1

0.15

2.3

3.6

* Pb / RoHS Free

MECHANICAL DATA

* Case : SMB (DO-214AA) Molded plastic

* Epoxy : UL94V-O rate flame retardant

* Maximum Lead Temperature for Soldering Purposes :

260 °C for 10 Seconds

Dimensions in millimeter

* Leads : Modified L-Bend providing more contact area to bond pads.

* Polarity : Cathode indicated by polarity band.

* Mounting position : Any

* Weight : 0.093 gram

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Maximum Steady State Power Dissipation at T_L= 75°C,

Measured at Zero Lead Length

P_D

3.0

Derate Above 75 °C

mW/°C

°C/W

Thermal Resistance From Junction to Lead

Maximum Steady State Power Dissipation at Ta = 25 °C

Measured at Zero Lead Length

R_θ

P_D

550

4.4

226

Derate Above 25 °C

mW/°C

°C/W

Volts

°C

Thermal Resistance From Junction to Ambient

Maximum Forward Voltage at IF = 200 mA

Junction Temperature Range

R_θJA

1.5

- 65 to + 150

Storage Temperature Range

Tstg

°C

Page 1 of 3

Rev. 06 : December 23, 2009

12 3

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